发明授权
US08207521B2 Method for producing catalyst-free single crystal silicon nanowires, nanowires produced by the method and nanodevice comprising the nanowires
有权
用于生产无催化剂的单晶硅纳米线的方法,通过该方法制备的纳米线和包含纳米线的纳米器件
- 专利标题: Method for producing catalyst-free single crystal silicon nanowires, nanowires produced by the method and nanodevice comprising the nanowires
- 专利标题(中): 用于生产无催化剂的单晶硅纳米线的方法,通过该方法制备的纳米线和包含纳米线的纳米器件
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申请号: US12708027申请日: 2010-02-18
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公开(公告)号: US08207521B2公开(公告)日: 2012-06-26
- 发明人: Eun Kyung Lee , Dongmok Whang , Byoung Lyong Choi , Byung Sung Kim
- 申请人: Eun Kyung Lee , Dongmok Whang , Byoung Lyong Choi , Byung Sung Kim
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Cantor Colburn LLP
- 优先权: KR10-2007-0129907 20071213
- 主分类号: H01L29/06
- IPC分类号: H01L29/06
摘要:
Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal catalyst can be prevented from being introduced into the nanowires, contributing to an improvement in the electrical and optical properties of the nanowires. Also disclosed herein are nanowires produced by the method and nanodevice comprising the nanowires.
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