Invention Grant
- Patent Title: Vertical non-volatile switch with punchthrough access and method of fabrication therefor
- Patent Title (中): 垂直非易失性开关及其制造方法
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Application No.: US12502089Application Date: 2009-07-13
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Publication No.: US08208285B2Publication Date: 2012-06-26
- Inventor: Maroun Georges Khoury , Hyung-Kyu Lee , Peter Nicholas Manos , Chulmin Jung , YoungPil Kim
- Applicant: Maroun Georges Khoury , Hyung-Kyu Lee , Peter Nicholas Manos , Chulmin Jung , YoungPil Kim
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Hall Estill Attorneys at Law
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/14 ; G11C11/15 ; G11C7/00 ; G11C7/22 ; G11C7/12 ; G11C11/16
Abstract:
A semiconductor device for accessing non-volatile memory cell is provided. In some embodiments, the semiconductor device has a vertical stack of semiconductor layers including a source, a drain, and a well. An application of a drain-source bias voltage to the semiconductor device generates a punchthrough mechanism across the well to initiate a flow of current between the source and the drain.
Public/Granted literature
- US20110007547A1 Vertical Non-Volatile Switch with Punchthrough Access and Method of Fabrication Therefor Public/Granted day:2011-01-13
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