发明授权
- 专利标题: Plasma processing apparatus
- 专利标题(中): 等离子体处理装置
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申请号: US11447011申请日: 2006-06-06
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公开(公告)号: US08216420B2公开(公告)日: 2012-07-10
- 发明人: Hideyuki Kazumi , Akihiro Sano , Akitaka Makino , Hitoshi Tamura , Masamichi Sakaguchi
- 申请人: Hideyuki Kazumi , Akihiro Sano , Akitaka Makino , Hitoshi Tamura , Masamichi Sakaguchi
- 申请人地址: JP Tokyo
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 优先权: JP2005-164947 20050606
- 主分类号: C23C16/00
- IPC分类号: C23C16/00 ; C23F1/00 ; H01L21/306
摘要:
A plasma processing apparatus for generating highly-uniform and stable plasma. In an apparatus for generating plasma by using a μ wave, concerning a method for rotating the μ wave in terms of time, a plurality of (larger than two and smaller than four) waveguides are used, then forming an angle between the respective waveguides, and setting a phase difference between respective electric fields therein. This configuration allows introduction of the circularly polarized wave into a processing chamber. At this time, there are provided configuration components such as a waveguide locating method, a unit therefor, a μ-wave merging box, and a reflective-wave control unit using a reflection control chamber.
公开/授权文献
- US20060283550A1 Plasma processing apparatus 公开/授权日:2006-12-21
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