Invention Grant
US08216767B2 Patterning process and chemical amplified photoresist with a photodegradable base
有权
图案化过程和具有可光降解基底的化学放大光致抗蚀剂
- Patent Title: Patterning process and chemical amplified photoresist with a photodegradable base
- Patent Title (中): 图案化过程和具有可光降解基底的化学放大光致抗蚀剂
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Application No.: US12555145Application Date: 2009-09-08
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Publication No.: US08216767B2Publication Date: 2012-07-10
- Inventor: Chien-Wei Wang , Ching-Yu Chang , Tsai-Sheng Gau , Burn Jeng Lin
- Applicant: Chien-Wei Wang , Ching-Yu Chang , Tsai-Sheng Gau , Burn Jeng Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/004 ; G03F7/40 ; G03F7/028
Abstract:
A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photodegradable base material; and exposing at least a portion of the second material layer.
Public/Granted literature
- US20110059396A1 PATTERNING PROCESS AND CHEMICAL AMPLIFIED PHOTORESIST WITH A PHOTODEGRADABLE BASE Public/Granted day:2011-03-10
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