发明授权
US08216767B2 Patterning process and chemical amplified photoresist with a photodegradable base
有权
图案化过程和具有可光降解基底的化学放大光致抗蚀剂
- 专利标题： Patterning process and chemical amplified photoresist with a photodegradable base
- 专利标题（中）： 图案化过程和具有可光降解基底的化学放大光致抗蚀剂
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申请号： US12555145申请日： 2009-09-08
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公开(公告)号： US08216767B2公开(公告)日： 2012-07-10
- 发明人: Chien-Wei Wang , Ching-Yu Chang , Tsai-Sheng Gau , Burn Jeng Lin
- 申请人： Chien-Wei Wang , Ching-Yu Chang , Tsai-Sheng Gau , Burn Jeng Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： G03F7/00
- IPC分类号： G03F7/00 ; G03F7/004 ; G03F7/40 ; G03F7/028
摘要：
A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photodegradable base material; and exposing at least a portion of the second material layer.
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