发明授权
- 专利标题: Voltage switching in a memory device
- 专利标题(中): 存储器件中的电压切换
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申请号: US12775131申请日: 2010-05-06
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公开(公告)号: US08217705B2公开(公告)日: 2012-07-10
- 发明人: Giulio G. Marotta , Carlo Musilli , Stefano Perugini , Alessandro Torsi , Tommaso Vali
- 申请人: Giulio G. Marotta , Carlo Musilli , Stefano Perugini , Alessandro Torsi , Tommaso Vali
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Leffert Jay & Polglaze, P. A.
- 主分类号: H03K17/687
- IPC分类号: H03K17/687
摘要:
Voltage switches, memory devices, memory systems, and methods for switching are disclosed. One such voltage switch uses a pair of switch circuits coupled in series, each switch circuit being driven by a level shift circuit. Each switch circuit uses a group of series coupled transistors with a parallel control transistor where the number of transistors in each group may be determined by an expected switch input voltage and a maximum allowable voltage drop for each transistor. A voltage of a particular state of an enable signal is shifted up to the switch input voltage by the level shift circuits. The particular state of the enable signal turns on the voltage switch such that the switch output voltage is substantially equal to the switch input voltage.
公开/授权文献
- US20110273219A1 VOLTAGE SWITCHING IN A MEMORY DEVICE 公开/授权日:2011-11-10
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