发明授权
US08222057B2 Crack free multilayered devices, methods of manufacture thereof and articles comprising the same 有权
无裂纹多层器件及其制造方法及其制品

Crack free multilayered devices, methods of manufacture thereof and articles comprising the same
摘要:
Disclosed herein is an article comprising a substrate; an interlayer comprising aluminum nitride, gallium nitride, boron nitride, indium nitride or a solid solution of aluminum nitride, gallium nitride, boron nitride and/or indium nitride; the interlayer being directly disposed upon the substrate and in contact with the substrate; where the interlayer comprises a columnar film and/or nanorods and/or nanotubes; and a group-III nitride layer disposed upon the interlayer; where the group-III nitride layer completely covers a surface of the interlayer that is opposed to a surface in contact with the substrate; the group-III nitride layer being free from cracks.
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