发明授权
US08222727B2 Conductive structures for microfeature devices and methods for fabricating microfeature devices
有权
用于微特征器件的导电结构和用于制造微特征器件的方法
- 专利标题: Conductive structures for microfeature devices and methods for fabricating microfeature devices
- 专利标题(中): 用于微特征器件的导电结构和用于制造微特征器件的方法
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申请号: US12613413申请日: 2009-11-05
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公开(公告)号: US08222727B2公开(公告)日: 2012-07-17
- 发明人: Mark S. Johnson
- 申请人: Mark S. Johnson
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Perkins Coie LLP
- 主分类号: H01L23/04
- IPC分类号: H01L23/04
摘要:
Methods for fabricating conductive structures on and/or in interposing devices and microfeature devices that are formed using such methods are disclosed herein. In one embodiment, a method for fabricating interposer devices having substrates includes forming a plurality of conductive sections on a first substrate in a first pattern. The method continues by forming a plurality of conductive sections on a second substrate in a second pattern. The method further includes constructing a plurality of conductive lines in a common third pattern on both the first substrate and the second substrate. The conductive lines can be formed on the first and second substrates either before or after forming the first pattern of conductive sections on the first substrate and/or forming the second pattern of conductive sections on the second substrate.
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