发明授权
- 专利标题: Flare correction method, method for manufacturing mask for lithography, and method for manufacturing semiconductor device
- 专利标题(中): 光斑修正方法,光刻用掩模的制造方法以及半导体装置的制造方法
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申请号: US12868779申请日: 2010-08-26
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公开(公告)号: US08227151B2公开(公告)日: 2012-07-24
- 发明人: Ryoichi Inanami , Suigen Kyoh
- 申请人: Ryoichi Inanami , Suigen Kyoh
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2009-213488 20090915
- 主分类号: G03F1/70
- IPC分类号: G03F1/70 ; G03F7/20 ; G06F17/50
摘要:
In one embodiment, a flare correction method is disclosed. The method can acquire a flare point spread function. The method can calculate a pattern density distribution in a first region of the mask, the distance from the pattern being equal to or shorter than a predetermined value in the first region. The method can calculate pattern coverage in a second region of the mask, the distance from the pattern being longer than the predetermined value. The method can calculate a first flare distribution with respect to the pattern by performing convolution integration between the flare point spread function corresponding to the first region and the pattern density distribution. The method can calculate a flare value corresponding to the second region by multiplying a value of integral of the flare point spread function corresponding to the second region by the pattern coverage. The method can calculate a second flare distribution by adding the flare value to the first flare distribution. In addition, the method can correct the pattern based on the second flare distribution.
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