Invention Grant
- Patent Title: Doping minor elements into metal bumps
- Patent Title (中): 将次要元素掺入金属凸块
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Application No.: US12843760Application Date: 2010-07-26
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Publication No.: US08227334B2Publication Date: 2012-07-24
- Inventor: Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu , Chien Ling Hwang , Cheng-Chung Lin , Hui-Jung Tsai , Zheng-Yi Lim
- Applicant: Ming-Da Cheng , Ming-Che Ho , Chung-Shi Liu , Chien Ling Hwang , Cheng-Chung Lin , Hui-Jung Tsai , Zheng-Yi Lim
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of forming a device includes providing a substrate, and forming a solder bump over the substrate. A minor element is introduced to a region adjacent a top surface of the solder bump. A re-flow process is then performed to the solder bump to drive the minor element into the solder bump.
Public/Granted literature
- US20120018878A1 Doping Minor Elements into Metal Bumps Public/Granted day:2012-01-26
Information query
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