发明授权
- 专利标题： Low lag transfer gate device
- 专利标题（中）： 低延迟传输门装置
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申请号： US12013817申请日： 2008-01-14
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公开(公告)号： US08227844B2公开(公告)日： 2012-07-24
- 发明人: James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan
- 申请人： James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Anthony J. Canale
- 主分类号： H01L31/062
- IPC分类号： H01L31/062 ; H01L31/113 ; H01L27/148 ; H01L21/00
摘要：
A CMOS active pixel sensor (APS) cell structure includes at least one transfer gate device and method of operation. A first transfer gate device comprises a diodic or split transfer gate conductor structure having a first doped region of first conductivity type material and a second doped region of a second conductivity type material. A photosensing device is formed adjacent the first doped region for collecting charge carriers in response to light incident thereto, and, a diffusion region of a second conductivity type material is formed at or below the substrate surface adjacent the second doped region of the transfer gate device for receiving charges transferred from the photosensing device while preventing spillback of charges to the photosensing device upon timed voltage bias to the diodic or split transfer gate conductor structure.
公开/授权文献
- US20090179232A1 LOW LAG TRANSFER GATE DEVICE 公开/授权日：2009-07-16
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