发明授权
- 专利标题: Pattern matching method in manufacturing semiconductor memory devices
- 专利标题(中): 制造半导体存储器件的图案匹配方法
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申请号: US12253618申请日: 2008-10-17
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公开(公告)号: US08229205B2公开(公告)日: 2012-07-24
- 发明人: Chan-Kyeong Hyon , Young-Seog Kang , Sang-Ho Lee , Hyun-Jong Lee
- 申请人: Chan-Kyeong Hyon , Young-Seog Kang , Sang-Ho Lee , Hyun-Jong Lee
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 优先权: KR10-2007-0105341 20071019
- 主分类号: G06K9/00
- IPC分类号: G06K9/00 ; G06K9/36 ; G06K9/32
摘要:
A pattern matching method for use in manufacturing a semiconductor memory device increases a pattern matching rate between a GDS image and an SEM image. The pattern matching method includes extracting a scanning electron microscope (SEM) image and a graphic data system (GDS) image to perform a pattern matching; performing a two-dimensional Fourier transform (FFT) for the extracted GDS image and analyzing a low spatial frequency; deciding whether or not a pattern is a repeated pattern or non-repeated pattern by using the analyzed low spatial frequency; and limiting an X/Y range for a pattern matching when the decision result is for the repeated pattern, and then performing the pattern matching between the SEM image and the GDS image.
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