发明授权
- 专利标题： Reactor for polycrystalline silicon and polycrystalline silicon production method
- 专利标题（中）： 多晶硅反应堆和多晶硅生产方法
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申请号： US12232612申请日： 2008-09-19
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公开(公告)号： US08231724B2公开(公告)日： 2012-07-31
- 发明人: Toshihide Endoh , Toshiyuki Ishii , Masaaki Sakaguchi , Naoki Hatakeyama
- 申请人： Toshihide Endoh , Toshiyuki Ishii , Masaaki Sakaguchi , Naoki Hatakeyama
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Materials Corporation
- 当前专利权人： Mitsubishi Materials Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Edwards Wildman Palmer LLP
- 优先权： JP2007-244352 20070920; JP2008-177980 20080708
- 主分类号： C30B33/06
- IPC分类号： C30B33/06 ; C30B23/00 ; C30B25/00 ; C30B28/12 ; C30B28/14 ; C30B35/00
摘要：
The reactor for polycrystalline silicon is a reactor for polycrystalline silicon in which a silicon seed rod installed inside the reactor is heated by supplying electricity, a raw material gas supplied inside the reactor is allowed to react, thereby producing polycrystalline silicon on the surface of the silicon seed rod, and specifically, the reactor for polycrystalline silicon is provided with a raw material gas supply port installed on the bottom of the reactor and a raw material gas supply nozzle attached to the raw material gas supply port so as to be communicatively connected and extending upward, in which the upper end of the raw material gas supply nozzle is set to a height in a range from −10 cm to +5 cm on the basis of the upper end of the electrode which retains the silicon seed rod.