发明授权
US08232199B2 Method of fabricating semiconductor device comprises a photoresist pattern having a desired critical dimension
失效
制造半导体器件的方法包括具有所需临界尺寸的光致抗蚀剂图案
- 专利标题: Method of fabricating semiconductor device comprises a photoresist pattern having a desired critical dimension
- 专利标题(中): 制造半导体器件的方法包括具有所需临界尺寸的光致抗蚀剂图案
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申请号: US12828404申请日: 2010-07-01
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公开(公告)号: US08232199B2公开(公告)日: 2012-07-31
- 发明人: Won Song , Byung-Goo Jeon
- 申请人: Won Song , Byung-Goo Jeon
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec, PA
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763
摘要:
A method of fabricating a semiconductor device and a fabrication system of the semiconductor device are provided. The method includes sequentially forming a film to be etched and a dielectric film and measuring a thickness of the dielectric film, forming a photoresist film on the dielectric film, performing a lithography process using the measured thickness of the dielectric film to form a photoresist film pattern, and etching the dielectric film and the film to be etched using the photoresist film pattern.