发明授权
- 专利标题： Shallow trench isolation for SOI structures combining sidewall spacer and bottom liner
- 专利标题（中）： 浅沟槽隔离用于结合侧墙和底衬的SOI结构
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申请号： US11788184申请日： 2007-04-18
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公开(公告)号： US08236638B2公开(公告)日： 2012-08-07
- 发明人: Konstantin V. Loiko , Toni D. Van Gompel , Rode R. Mora , Michael D. Turner , Brian A. Winstead , Mark D. Hall
- 申请人： Konstantin V. Loiko , Toni D. Van Gompel , Rode R. Mora , Michael D. Turner , Brian A. Winstead , Mark D. Hall
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L21/336 ; H01L21/76
摘要：
A method for making a semiconductor device is provided which includes (a) providing a layer stack comprising a semiconductor layer (211) and a dielectric layer (209) disposed between the substrate and the semiconductor layer, (b) creating a trench (210) which extends through the semiconductor layer and which exposes a portion of the dielectric layer, the trench having a sidewall, (c) creating a spacer structure (221) which comprises a first material and which is adjacent to the sidewall of the trench, and (d) forming a stressor layer (223) which comprises a second material and which is disposed on the bottom of the trench.
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