发明授权
US08236659B2 Source and drain feature profile for improving device performance and method of manufacturing same
有权
源极和漏极特征轮廓，用于提高器件性能及其制造方法
- 专利标题： Source and drain feature profile for improving device performance and method of manufacturing same
- 专利标题（中）： 源极和漏极特征轮廓，用于提高器件性能及其制造方法
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申请号： US12816519申请日： 2010-06-16
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公开(公告)号： US08236659B2公开(公告)日： 2012-08-07
- 发明人: Ming-Huan Tsai , Chun-Fai Cheng , Hui Ouyang , Yuan-Hung Chiu , Yen-Ming Chen
- 申请人： Ming-Huan Tsai , Chun-Fai Cheng , Hui Ouyang , Yuan-Hung Chiu , Yen-Ming Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source and drain (LDD) region in a source and drain region of the device. The doped region is implanted with a dopant type opposite the LDD region.