Invention Grant
- Patent Title: Semiconductor device and process for producing same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12664751Application Date: 2007-12-05
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Publication No.: US08236666B2Publication Date: 2012-08-07
- Inventor: Seiki Hiramatsu , Kei Yamamoto , Atsuko Fujino , Takashi Nishimura , Kenji Mimura , Hideki Takigawa , Hiroki Shiota , Nobutake Taniguchi , Hiroshi Yoshida
- Applicant: Seiki Hiramatsu , Kei Yamamoto , Atsuko Fujino , Takashi Nishimura , Kenji Mimura , Hideki Takigawa , Hiroki Shiota , Nobutake Taniguchi , Hiroshi Yoshida
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-185742 20070717
- International Application: PCT/JP2007/073483 WO 20071205
- International Announcement: WO2009/011077 WO 20090122
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/46 ; H01L21/30
Abstract:
Provided is a semiconductor device including: a base plate; a thermally conductive resin layer formed on an upper surface of the base plate; an integrated layer which is formed on an upper surface of the thermally conductive resin layer, and includes an electrode and an insulating resin layer covering all side surfaces of the electrode; and a semiconductor element formed on an upper surface of the electrode, in which the integrated layer is thermocompression bonded to the base plate through the thermally conductive resin layer. This semiconductor device excels in insulating properties and reliability.
Public/Granted literature
- US20100201002A1 SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING SAME Public/Granted day:2010-08-12
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