Invention Grant
US08236710B2 Technique to create a buried plate in embedded dynamic random access memory device
有权
在嵌入式动态随机存取存储器件中创建掩埋板的技术
- Patent Title: Technique to create a buried plate in embedded dynamic random access memory device
- Patent Title (中): 在嵌入式动态随机存取存储器件中创建掩埋板的技术
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Application No.: US12899638Application Date: 2010-10-07
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Publication No.: US08236710B2Publication Date: 2012-08-07
- Inventor: Ashima B. Chakravarti , Jacob B. Dadson , Paul J. Higgins , Babar A. Khan , John J. Moore , Christopher C. Parks , Rohit S. Takalkar
- Applicant: Ashima B. Chakravarti , Jacob B. Dadson , Paul J. Higgins , Babar A. Khan , John J. Moore , Christopher C. Parks , Rohit S. Takalkar
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Katherine S. Brown, Esq.
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
A method for forming a trench structure is provided for a semiconductor and/or memory device, such as an DRAM device. In one embodiment, the method for forming a trench structure includes forming a trench in a semiconductor substrate, and exposing the sidewalls of the trench to an arsenic-containing gas to adsorb an arsenic containing layer on the sidewalls of the trench. A material layer is then deposited on the sidewalls of the trench to encapsulate the arsenic-containing layer between the material layer and sidewalls of the trench.
Public/Granted literature
- US20120086103A1 TECHNIQUE TO CREATE A BURIED PLATE IN EMBEDDED DYNAMIC RANDOM ACCESS MEMORY DEVICE Public/Granted day:2012-04-12
Information query
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