Invention Grant
- Patent Title: Method for passivating a field-effect transistor
- Patent Title (中): 钝化场效应晶体管的方法
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Application No.: US12619304Application Date: 2009-11-16
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Publication No.: US08237204B2Publication Date: 2012-08-07
- Inventor: Richard Fix , Oliver Wolst , Stefan Henneck , Alexander Martin , Martin Le-Huu
- Applicant: Richard Fix , Oliver Wolst , Stefan Henneck , Alexander Martin , Martin Le-Huu
- Applicant Address: DE Stuttgart
- Assignee: Robert Bosch GmbH
- Current Assignee: Robert Bosch GmbH
- Current Assignee Address: DE Stuttgart
- Agency: Kenyon & Kenyon LLP
- Priority: DE102008043858 20081119
- Main IPC: G01N27/403
- IPC: G01N27/403

Abstract:
The present invention relates to a method for passivating a semiconductor component having at least one chemosensitive electrode that is blinded by the application of a glass layer. The present invention also relates to a device for detecting at least one substance included in a fluid stream, including at least one semiconductor component acting as a measuring sensor as well as at least one semiconductor component acting as a reference element, the semiconductor components each having a chemosensitive electrode, and the chemosensitive electrode of the semiconductor component acting as the reference element being passivated. For the passivation, a glass layer may be applied at least to the chemosensitive electrode of the semiconductor component acting as reference element.
Public/Granted literature
- US20100133591A1 METHOD FOR PASSIVATING A FIELD-EFFECT TRANSISTOR Public/Granted day:2010-06-03
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