公开(公告)号：US08698319B2

公开(公告)日：2014-04-15

申请号：US12998680

申请日：2009-11-17

申请人： Richard Fix ,  Frederik Schrey ,  Oliver Wolst ,  Ingo Daumiller ,  Alexander Martin ,  Martin Le-Huu ,  Mike Kunze

发明人： Richard Fix ,  Frederik Schrey ,  Oliver Wolst ,  Ingo Daumiller ,  Alexander Martin ,  Martin Le-Huu ,  Mike Kunze

IPC分类号： H01L23/528

CPC分类号： G01N27/414

摘要： An electronic component includes a printed conductor structure on a substrate, as well as a film which contacts the printed conductor structure. The film has a smaller layer thickness than the printed conductor. The printed conductor structure has a region which is covered by the film for the purpose of contacting.

摘要翻译： 电子部件包括在基板上的印刷导体结构以及与印刷导体结构接触的薄膜。 该膜具有比印刷导体更薄的层厚度。 印刷导体结构具有被膜覆盖以便接触的区域。

公开(公告)号：US20110272747A1

公开(公告)日：2011-11-10

申请号：US12998680

申请日：2009-11-17

申请人： Richard Fix ,  Frederik Schrey ,  Oliver Wolst ,  Ingo Daumiller ,  Alexander Martin ,  Martin Le-Huu ,  Mike Kunze

发明人： Richard Fix ,  Frederik Schrey ,  Oliver Wolst ,  Ingo Daumiller ,  Alexander Martin ,  Martin Le-Huu ,  Mike Kunze

IPC分类号： G01N27/414 ,  H01L23/48

CPC分类号： G01N27/414

摘要： An electronic component includes a printed conductor structure on a substrate, as well as a film which contacts the printed conductor structure. The film has a smaller layer thickness than the printed conductor. The printed conductor structure has a region which is covered by the film for the purpose of contacting.

摘要翻译： 电子部件包括在基板上的印刷导体结构以及与印刷导体结构接触的薄膜。 该膜具有比印刷导体更薄的层厚度。 印刷导体结构具有被膜覆盖以便接触的区域。

公开(公告)号：US20100133591A1

公开(公告)日：2010-06-03

申请号：US12619304

申请日：2009-11-16

申请人： Richard Fix ,  Oliver Wolst ,  Stefan Henneck ,  Alexander Martin ,  Martin Le-Huu

发明人： Richard Fix ,  Oliver Wolst ,  Stefan Henneck ,  Alexander Martin ,  Martin Le-Huu

IPC分类号： H01L29/66 ,  H01L21/3205 ,  H01L29/861

CPC分类号： G01N27/414 ,  H01L23/291 ,  H01L23/296 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/3011 ,  H01L2924/00

摘要： The present invention relates to a method for passivating a semiconductor component having at least one chemosensitive electrode that is blinded by the application of a glass layer. The present invention also relates to a device for detecting at least one substance included in a fluid stream, including at least one semiconductor component acting as a measuring sensor as well as at least one semiconductor component acting as a reference element, the semiconductor components each having a chemosensitive electrode, and the chemosensitive electrode of the semiconductor component acting as the reference element being passivated. For the passivation, a glass layer may be applied at least to the chemosensitive electrode of the semiconductor component acting as reference element.

摘要翻译： 本发明涉及一种钝化半导体元件的方法，所述半导体元件具有通过施加玻璃层而被遮蔽的至少一个化学敏感电极。 本发明还涉及用于检测包括在流体流中的至少一种物质的装置，包括至少一个用作测量传感器的半导体部件以及用作参考元件的至少一个半导体部件，所述半导体部件各自具有 化学敏感电极和用作参考元件的半导体组件的化学敏感电极被钝化。 对于钝化，玻璃层可以至少施加到用作参考元件的半导体组件的化学敏感电极上。

公开(公告)号：US20110132773A1

公开(公告)日：2011-06-09

申请号：US12452673

申请日：2008-07-03

申请人： Dirk Liemersdorf ,  Richard Fix ,  Oliver Wolst ,  Alexander Martin ,  Martin Le-Huu

发明人： Dirk Liemersdorf ,  Richard Fix ,  Oliver Wolst ,  Alexander Martin ,  Martin Le-Huu

IPC分类号： G01N27/414 ,  H01L29/772

CPC分类号： G01N27/4148

摘要： An apparatus for detecting at least one substance present in a fluid flow includes at least one field effect transistor which acts as a measuring sensor, and at least one field effect transistor which acts as a reference element, the field effect transistors each having at least one source electrode, one drain electrode, and one gate electrode. The gate electrode of the field effect transistor which acts as the measuring sensor is sensitive to the at least one substance to be detected, and the gate electrode of the field effect transistor which acts as the reference element is essentially insensitive to the at least one substance to be detected. The source electrode of one of the field effect transistors and the drain electrode of the other of the field effect transistors are connected to one another and to a signal line. A method for detecting at least one substance present in a fluid flow by using the apparatus is also described, a potential of 0 volt being applied to the signal line and the current flowing on the signal line being measured.

摘要翻译： 用于检测存在于流体流中的至少一种物质的装置包括至少一个用作测量传感器的场效应晶体管和至少一个作为参考元件的场效应晶体管，每个场效应晶体管具有至少一个 源电极，一个漏电极和一个栅电极。 用作测量传感器的场效应晶体管的栅电极对待检测的至少一种物质敏感，作为参考元件的场效应晶体管的栅电极对至少一种物质基本上不敏感 被检测。 场效应晶体管中的一个的源电极和另一个场效应晶体管的漏电极彼此连接并连接到信号线。 还描述了通过使用该装置来检测存在于流体流中的至少一种物质的方法，将对信号线施加0伏的电位，并测量在信号线上流动的电流。

公开(公告)号：US08237204B2

公开(公告)日：2012-08-07

申请号：US12619304

申请日：2009-11-16

申请人： Richard Fix ,  Oliver Wolst ,  Stefan Henneck ,  Alexander Martin ,  Martin Le-Huu

发明人： Richard Fix ,  Oliver Wolst ,  Stefan Henneck ,  Alexander Martin ,  Martin Le-Huu

IPC分类号： G01N27/403

CPC分类号： G01N27/414 ,  H01L23/291 ,  H01L23/296 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/3011 ,  H01L2924/00

摘要： The present invention relates to a method for passivating a semiconductor component having at least one chemosensitive electrode that is blinded by the application of a glass layer. The present invention also relates to a device for detecting at least one substance included in a fluid stream, including at least one semiconductor component acting as a measuring sensor as well as at least one semiconductor component acting as a reference element, the semiconductor components each having a chemosensitive electrode, and the chemosensitive electrode of the semiconductor component acting as the reference element being passivated. For the passivation, a glass layer may be applied at least to the chemosensitive electrode of the semiconductor component acting as reference element.

摘要翻译： 本发明涉及一种钝化半导体元件的方法，所述半导体元件具有通过施加玻璃层而被遮蔽的至少一个化学敏感电极。 本发明还涉及用于检测包括在流体流中的至少一种物质的装置，包括至少一个用作测量传感器的半导体部件以及用作参考元件的至少一个半导体部件，所述半导体部件各自具有 化学敏感电极和用作参考元件的半导体组件的化学敏感电极被钝化。 对于钝化，玻璃层可以至少施加到用作参考元件的半导体组件的化学敏感电极上。

公开(公告)号：US20110198674A1

公开(公告)日：2011-08-18

申请号：US13012596

申请日：2011-01-24

申请人： Andreas Krauss ,  Martin Le-Huu

发明人： Andreas Krauss ,  Martin Le-Huu

IPC分类号： G01N27/414 ,  G01N27/403

CPC分类号： G01N27/4141

摘要： A gas-sensitive field effect transistor is described which includes a semiconductor substrate having a main substrate surface. The semiconductor substrate has a source region, a gate region, and a drain region. The field effect transistor also includes an insulating layer which has a first main surface facing the main substrate surface, and a second main surface facing away from the main substrate surface. The insulating layer at least partially covers the main substrate surface, and in the area of the gate region has an opening or a region having reduced layer thickness having beveled side walls. An area of the opening in the second main surface is larger than an area of the opening in the first main surface. Lastly, the field effect transistor includes a gate electrode layer which covers at least a partial region of the first main surface of the insulating layer, a region of the beveled side walls of the opening, and an area of the gate region. The gate electrode layer includes a material or a structuring which causes a change in the electrical properties of the gate electrode layer upon contact with a predefined gas.

摘要翻译： 描述了一种气敏场效应晶体管，其包括具有主衬底表面的半导体衬底。 半导体衬底具有源极区域，栅极区域和漏极区域。 场效应晶体管还包括具有面向主衬底表面的第一主表面和远离主衬底表面的第二主表面的绝缘层。 绝缘层至少部分地覆盖主基板表面，并且在栅极区域的区域中具有开口或具有减小的层厚度的具有倾斜侧壁的区域。 第二主表面的开口面积大于第一主表面的开口面积。 最后，场效应晶体管包括覆盖绝缘层的第一主表面的至少一部分区域，开口的斜面侧壁的区域和栅极区域的区域的栅电极层。 栅极电极层包括在与预定气体接触时引起栅电极层的电性能变化的材料或结构。