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    METHOD FOR PASSIVATING A FIELD-EFFECT TRANSISTOR
    1.
    发明申请
    METHOD FOR PASSIVATING A FIELD-EFFECT TRANSISTOR 有权
    用于对场效应晶体管进行处理的方法

    公开(公告)号：US20100133591A1

    公开(公告)日：2010-06-03

    申请号：US12619304

    申请日：2009-11-16

    申请人： Richard Fix ,  Oliver Wolst ,  Stefan Henneck ,  Alexander Martin ,  Martin Le-Huu

    发明人： Richard Fix ,  Oliver Wolst ,  Stefan Henneck ,  Alexander Martin ,  Martin Le-Huu

    IPC分类号： H01L29/66 ,  H01L21/3205 ,  H01L29/861

    CPC分类号： G01N27/414 ,  H01L23/291 ,  H01L23/296 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/3011 ,  H01L2924/00

    摘要： The present invention relates to a method for passivating a semiconductor component having at least one chemosensitive electrode that is blinded by the application of a glass layer. The present invention also relates to a device for detecting at least one substance included in a fluid stream, including at least one semiconductor component acting as a measuring sensor as well as at least one semiconductor component acting as a reference element, the semiconductor components each having a chemosensitive electrode, and the chemosensitive electrode of the semiconductor component acting as the reference element being passivated. For the passivation, a glass layer may be applied at least to the chemosensitive electrode of the semiconductor component acting as reference element.

    摘要翻译： 本发明涉及一种钝化半导体元件的方法，所述半导体元件具有通过施加玻璃层而被遮蔽的至少一个化学敏感电极。 本发明还涉及用于检测包括在流体流中的至少一种物质的装置，包括至少一个用作测量传感器的半导体部件以及用作参考元件的至少一个半导体部件，所述半导体部件各自具有 化学敏感电极和用作参考元件的半导体组件的化学敏感电极被钝化。 对于钝化，玻璃层可以至少施加到用作参考元件的半导体组件的化学敏感电极上。

    Method for passivating a field-effect transistor
    2.
    发明授权
    Method for passivating a field-effect transistor 有权
    钝化场效应晶体管的方法

    公开(公告)号：US08237204B2

    公开(公告)日：2012-08-07

    申请号：US12619304

    申请日：2009-11-16

    申请人： Richard Fix ,  Oliver Wolst ,  Stefan Henneck ,  Alexander Martin ,  Martin Le-Huu

    发明人： Richard Fix ,  Oliver Wolst ,  Stefan Henneck ,  Alexander Martin ,  Martin Le-Huu

    IPC分类号： G01N27/403

    CPC分类号： G01N27/414 ,  H01L23/291 ,  H01L23/296 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/3011 ,  H01L2924/00

    摘要： The present invention relates to a method for passivating a semiconductor component having at least one chemosensitive electrode that is blinded by the application of a glass layer. The present invention also relates to a device for detecting at least one substance included in a fluid stream, including at least one semiconductor component acting as a measuring sensor as well as at least one semiconductor component acting as a reference element, the semiconductor components each having a chemosensitive electrode, and the chemosensitive electrode of the semiconductor component acting as the reference element being passivated. For the passivation, a glass layer may be applied at least to the chemosensitive electrode of the semiconductor component acting as reference element.

    摘要翻译： 本发明涉及一种钝化半导体元件的方法，所述半导体元件具有通过施加玻璃层而被遮蔽的至少一个化学敏感电极。 本发明还涉及用于检测包括在流体流中的至少一种物质的装置，包括至少一个用作测量传感器的半导体部件以及用作参考元件的至少一个半导体部件，所述半导体部件各自具有 化学敏感电极和用作参考元件的半导体组件的化学敏感电极被钝化。 对于钝化，玻璃层可以至少施加到用作参考元件的半导体组件的化学敏感电极上。

    APPARATUS AND METHOD FOR DETECTING SUBSTANCES
    3.
    发明申请
    APPARATUS AND METHOD FOR DETECTING SUBSTANCES 审中-公开
    用于检测物质的装置和方法

    公开(公告)号：US20110132773A1

    公开(公告)日：2011-06-09

    申请号：US12452673

    申请日：2008-07-03

    申请人： Dirk Liemersdorf ,  Richard Fix ,  Oliver Wolst ,  Alexander Martin ,  Martin Le-Huu

    发明人： Dirk Liemersdorf ,  Richard Fix ,  Oliver Wolst ,  Alexander Martin ,  Martin Le-Huu

    IPC分类号： G01N27/414 ,  H01L29/772

    CPC分类号： G01N27/4148

    摘要： An apparatus for detecting at least one substance present in a fluid flow includes at least one field effect transistor which acts as a measuring sensor, and at least one field effect transistor which acts as a reference element, the field effect transistors each having at least one source electrode, one drain electrode, and one gate electrode. The gate electrode of the field effect transistor which acts as the measuring sensor is sensitive to the at least one substance to be detected, and the gate electrode of the field effect transistor which acts as the reference element is essentially insensitive to the at least one substance to be detected. The source electrode of one of the field effect transistors and the drain electrode of the other of the field effect transistors are connected to one another and to a signal line. A method for detecting at least one substance present in a fluid flow by using the apparatus is also described, a potential of 0 volt being applied to the signal line and the current flowing on the signal line being measured.

    摘要翻译： 用于检测存在于流体流中的至少一种物质的装置包括至少一个用作测量传感器的场效应晶体管和至少一个作为参考元件的场效应晶体管，每个场效应晶体管具有至少一个 源电极，一个漏电极和一个栅电极。 用作测量传感器的场效应晶体管的栅电极对待检测的至少一种物质敏感，作为参考元件的场效应晶体管的栅电极对至少一种物质基本上不敏感 被检测。 场效应晶体管中的一个的源电极和另一个场效应晶体管的漏电极彼此连接并连接到信号线。 还描述了通过使用该装置来检测存在于流体流中的至少一种物质的方法，将对信号线施加0伏的电位，并测量在信号线上流动的电流。

    SENSOR ELEMENT OF A GAS SENSOR AND METHOD FOR OPERATING THE SAME
    7.
    发明申请
    SENSOR ELEMENT OF A GAS SENSOR AND METHOD FOR OPERATING THE SAME 有权
    气体传感器的传感器元件及其操作方法

    公开(公告)号：US20120017665A1

    公开(公告)日：2012-01-26

    申请号：US13138288

    申请日：2009-12-15

    申请人： Oliver Wolst ,  Stefan Henneck ,  Markus Widenmeyer ,  Alexander Martin

    发明人： Oliver Wolst ,  Stefan Henneck ,  Markus Widenmeyer ,  Alexander Martin

    IPC分类号： G01M15/10 ,  G01N27/00

    CPC分类号： G01N27/414 ,  G01N27/4141 ,  G01N33/0013

    摘要： A sensor element of a gas sensor for determining gas components in gas mixtures includes a field effect transistor and/or a diode which has a current flow which changes upon contact with a gas to be detected, and which is positioned in a manner protected, by a protective cap, from direct access by the gas mixture. The protective cap has a heating element, a glass former, and/or an oxidation catalyst.

    摘要翻译： 用于确定气体混合物中的气体成分的气体传感器的传感器元件包括场效应晶体管和/或二极管，该场效应晶体管和/或二极管具有在与待检测气体接触时变化的电流，并且被以 一个保护盖，由气体混合物直接通入。 保护盖具有加热元件，玻璃形成器和/或氧化催化剂。

    Method for producing at least one porous layer
    8.
    发明申请
    Method for producing at least one porous layer 审中-公开
    生产至少一个多孔层的方法

    公开(公告)号：US20100065895A1

    公开(公告)日：2010-03-18

    申请号：US12311707

    申请日：2007-10-10

    申请人： Richard Fix ,  Oliver Wolst ,  Markus Widenmeyer ,  Alexander Martin

    发明人： Richard Fix ,  Oliver Wolst ,  Markus Widenmeyer ,  Alexander Martin

    IPC分类号： H01L29/66 ,  H01L21/44 ,  H01L21/469

    CPC分类号： C23C18/02 ,  C23C18/08 ,  C23C18/1208 ,  C23C18/122 ,  C23C18/127 ,  C23C18/14 ,  C23C24/08 ,  C23C26/00 ,  G01N27/4141

    摘要： A method for producing at least one porous layer on a substrate, whereby a suspension, which contains particles from a layer-forming material or molecular precursors of the layer-forming material, as well as at least one organic component, is applied to the substrate, the precursors of the layer-forming material are subsequently reacted to produce the layer-forming material following application to the substrate, in a next step, the particles from the layer-forming material are sintered, and the at least one organic component is subsequently removed. Also, a field-effect transistor having at least one gate electrode, the gate electrode having an electrically conductive, porous coating which was applied in accordance with the method.

    摘要翻译： 一种用于在基材上制备至少一个多孔层的方法，由此将含有成层材料的颗粒或成层材料的分子前体的悬浮液以及至少一种有机组分施加到基材上 随后在施加到基底之后使成层材料的前体反应以产生层形成材料，在下一步骤中，来自层形成材料的颗粒被烧结，随后至少一种有机组分 删除。 而且，具有至少一个栅电极的场效应晶体管，栅极具有根据该方法应用的导电多孔涂层。