发明授权
- 专利标题： Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus for semiconductor device
- 专利标题（中）： 半导体装置，半导体装置的制造方法以及半导体装置的制造装置
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申请号： US13052368申请日： 2011-03-21
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公开(公告)号： US08237295B2公开(公告)日： 2012-08-07
- 发明人: Yuichi Sano , Takashi Imoto , Naoto Takebe , Katsuhiro Ishida , Tomomi Honda , Yasushi Kumagai
- 申请人： Yuichi Sano , Takashi Imoto , Naoto Takebe , Katsuhiro Ishida , Tomomi Honda , Yasushi Kumagai
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2010-139998 20100618
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L23/40
摘要：
According to one embodiment, a semiconductor device includes a first semiconductor element, a first electrode, a ball part, a second electrode, and a wire. The first electrode is electrically connected to the first semiconductor element. The ball part is provided on the first electrode. The wire connects the ball part and the second electrode. A thickness of a turned-back portion at an end of the wire on a side opposite to the second electrode is smaller than a diameter of the wire.