公开(公告)号：US08237295B2

公开(公告)日：2012-08-07

申请号：US13052368

申请日：2011-03-21

Applicant: Yuichi Sano ,  Takashi Imoto ,  Naoto Takebe ,  Katsuhiro Ishida ,  Tomomi Honda ,  Yasushi Kumagai

Inventor： Yuichi Sano ,  Takashi Imoto ,  Naoto Takebe ,  Katsuhiro Ishida ,  Tomomi Honda ,  Yasushi Kumagai

IPC: H01L23/48 ,  H01L23/52 ,  H01L23/40

CPC classification number: H01L24/85 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48455 ,  H01L2224/48476 ,  H01L2224/4848 ,  H01L2224/48599 ,  H01L2224/48992 ,  H01L2224/48997 ,  H01L2224/4911 ,  H01L2224/49175 ,  H01L2224/49429 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85181 ,  H01L2224/92247 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/181 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  Y10T29/41 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/48465 ,  H01L2224/85399 ,  H01L2224/05599

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor element, a first electrode, a ball part, a second electrode, and a wire. The first electrode is electrically connected to the first semiconductor element. The ball part is provided on the first electrode. The wire connects the ball part and the second electrode. A thickness of a turned-back portion at an end of the wire on a side opposite to the second electrode is smaller than a diameter of the wire.

Abstract translation: 根据一个实施例，半导体器件包括第一半导体元件，第一电极，球形部分，第二电极和线。 第一电极电连接到第一半导体元件。 球部设置在第一电极上。 导线连接球部和第二电极。 在与第二电极相反的一侧的线的端部处的折回部分的厚度小于导线的直径。

公开(公告)号：US5869905A

公开(公告)日：1999-02-09

申请号：US782259

申请日：1997-01-14

Applicant: Naoto Takebe

Inventor： Naoto Takebe

IPC: H01L23/28 ,  H01L21/48 ,  H01L21/56 ,  H01L21/60 ,  H01L21/68 ,  H01L23/12 ,  H01L23/31 ,  H01L23/48 ,  H01L29/40 ,  H01L23/54

CPC classification number: H01L21/568 ,  H01L21/4832 ,  H01L21/565 ,  H01L23/3107 ,  H01L24/48 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/4554 ,  H01L2224/4556 ,  H01L2224/45639 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78743 ,  H01L2224/85001 ,  H01L2224/85045 ,  H01L2224/85186 ,  H01L2224/85203 ,  H01L2224/85951 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L24/45 ,  H01L24/49 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/18165

Abstract: One end of bonding wires made of aluminium, gold, etc., is connected to a plurality of electrode pads formed on the main surface of a semiconductor chip. The other end of these bonding wires is exposed on the surface of the molded resin unit. Connecting electrodes made of aluminium are formed on top of the exposed parts of these bonding wires. The semiconductor chip and external circuitry are connected electrically by means of these connecting electrodes.

Abstract translation: 由铝，金等制成的接合线的一端连接到形成在半导体芯片的主表面上的多个电极焊盘。 这些接合线的另一端露出在模制树脂单元的表面上。 在这些接合线的暴露部分的顶部形成有由铝制成的连接电极。 半导体芯片和外部电路通过这些连接电极电连接。

公开(公告)号：US20050110151A1

公开(公告)日：2005-05-26

申请号：US11023391

申请日：2004-12-29

Applicant: Itaru Tamura ,  Katsuya Murakami ,  Naoto Takebe

Inventor： Itaru Tamura ,  Katsuya Murakami ,  Naoto Takebe

IPC: H01L23/00 ,  H01L23/532 ,  H01L23/58 ,  H01L29/40

CPC classification number: H01L23/585 ,  H01L23/5329 ,  H01L23/562 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/01019 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor device uses a low-dielectric-constant film whose dielectric constant k is 3.0 or lower for an interlayer film. The semiconductor device includes a suppression mechanism unit that suppresses peeling of the interlayer film.

Abstract translation: 半导体器件使用介电常数k为3.0以下的低介电常数膜作为中间膜。 半导体器件包括抑制层间膜的剥离的抑制机构单元。

公开(公告)号：US20130062758A1

公开(公告)日：2013-03-14

申请号：US13422424

申请日：2012-03-16

Applicant: Takashi IMOTO ,  Yoriyasu Ando ,  Akira Tanimoto ,  Masaji Iwamoto ,  Yasuo Takemoto ,  Hideo Taguchi ,  Naoto Takebe ,  Koichi Miyashita ,  Jun Tanaka ,  Katsuhiro Ishida ,  Shogo Watanabe ,  Yuichi Sano

Inventor： Takashi IMOTO ,  Yoriyasu Ando ,  Akira Tanimoto ,  Masaji Iwamoto ,  Yasuo Takemoto ,  Hideo Taguchi ,  Naoto Takebe ,  Koichi Miyashita ,  Jun Tanaka ,  Katsuhiro Ishida ,  Shogo Watanabe ,  Yuichi Sano

IPC: H01L25/07 ,  H01L23/48

CPC classification number: H01L23/3135 ,  H01L23/145 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49894 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16237 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48624 ,  H01L2224/48824 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2224/92247 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/16225 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/32145 ,  H01L2224/45015 ,  H01L2924/207

Abstract: In one embodiment, a semiconductor device has a substrate, a first semiconductor chip, an electrode, a first and second connection member, and a first and second sealing member. The electrode is disposed on the first semiconductor chip and contains Al. The first connection member electrically connects the electrode and the substrate and contains Au or Cu. The first sealing member seals the first semiconductor chip and the first connection member. One or more second semiconductor chips are stacked on the first sealing member. The second sealing member seals the first connection member, the one or more second semiconductor chips, and the one or more second connection members. A ratio of a total weight W1 of Cl ions and Br ions in the first sealing member to a weight W0 of resins of the substrate and the first sealing member is 7.5 ppm or lower.

Abstract translation: 在一个实施例中，半导体器件具有衬底，第一半导体芯片，电极，第一和第二连接构件以及第一和第二密封构件。 电极设置在第一半导体芯片上并且包含Al。 第一连接构件电连接电极和衬底并且包含Au或Cu。 第一密封构件密封第一半导体芯片和第一连接构件。 一个或多个第二半导体芯片堆叠在第一密封构件上。 第二密封构件密封第一连接构件，一个或多个第二半导体芯片和一个或多个第二连接构件。 第一密封部件中的Cl离子和Br离子的总重量W1与基板和第一密封部件的树脂的重量W0的比例为7.5ppm以下。

公开(公告)号：US20110309502A1

公开(公告)日：2011-12-22

申请号：US13052368

申请日：2011-03-21

Applicant: Yuichi SANO ,  Takashi Imoto ,  Naoto Takebe ,  Katsuhiro Ishida ,  Tomomi Honda ,  Yasushi Kumagai

Inventor： Yuichi SANO ,  Takashi Imoto ,  Naoto Takebe ,  Katsuhiro Ishida ,  Tomomi Honda ,  Yasushi Kumagai

IPC: H01L23/49 ,  H01L21/60 ,  H01L21/44

CPC classification number: H01L24/85 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48455 ,  H01L2224/48476 ,  H01L2224/4848 ,  H01L2224/48599 ,  H01L2224/48992 ,  H01L2224/48997 ,  H01L2224/4911 ,  H01L2224/49175 ,  H01L2224/49429 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85181 ,  H01L2224/92247 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/181 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  Y10T29/41 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/48465 ,  H01L2224/85399 ,  H01L2224/05599

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor element, a first electrode, a ball part, a second electrode, and a wire. The first electrode is electrically connected to the first semiconductor element. The ball part is provided on the first electrode. The wire connects the ball part and the second electrode. A thickness of a turned-back portion at an end of the wire on a side opposite to the second electrode is smaller than a diameter of the wire.

Abstract translation: 根据一个实施例，半导体器件包括第一半导体元件，第一电极，球形部分，第二电极和线。 第一电极电连接到第一半导体元件。 球部设置在第一电极上。 导线连接球部和第二电极。 在与第二电极相反的一侧的线的端部处的折回部分的厚度小于导线的直径。

公开(公告)号：US20120286411A1

公开(公告)日：2012-11-15

申请号：US13422437

申请日：2012-03-16

Applicant: Takeshi Watanabe ,  Takashi Imoto ,  Naoto Takebe ,  Yuuki Kuro ,  Yusuke Doumae ,  Katsunori Shibuya ,  Yoshimune Kodama ,  Yuji Karakane ,  Masatoshi Kawato

Inventor： Takeshi Watanabe ,  Takashi Imoto ,  Naoto Takebe ,  Yuuki Kuro ,  Yusuke Doumae ,  Katsunori Shibuya ,  Yoshimune Kodama ,  Yuji Karakane ,  Masatoshi Kawato

IPC: H01L25/07 ,  H01L21/60 ,  H01L21/98 ,  H01L23/495

CPC classification number: H01L21/561 ,  H01L21/565 ,  H01L23/3128 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/16 ,  H01L25/18 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/06155 ,  H01L2224/24145 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/1023 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2225/1082 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19105 ,  H01L2924/3511 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/00

Abstract: According to one embodiment, there is provided a semiconductor device including a wiring board, a semiconductor chip mounted on a first surface of the wiring board, first external electrodes provided on the first surface of the wiring board, second external electrodes provided on a second surface of the wiring board, and a sealing resin layer sealing the semiconductor chip together with the first external electrodes. The sealing resin layer has a recessed portion exposing a part of each of the first external electrodes. The plural semiconductor devices are stacked to form a semiconductor module with a POP structure. In this case, the first external electrodes of the lower-side semiconductor device and the second external electrodes of the upper-side semiconductor device are electrically connected.

Abstract translation: 根据一个实施例，提供了一种半导体器件，包括布线板，安装在布线板的第一表面上的半导体芯片，设置在布线板的第一表面上的第一外部电极，设置在第二表面上的第二外部电极 的密封树脂层和与第一外部电极一起密封半导体芯片的密封树脂层。 密封树脂层具有暴露第一外部电极的一部分的凹部。 多个半导体器件被堆叠以形成具有POP结构的半导体模块。 在这种情况下，下侧半导体器件的第一外部电极和上侧半导体器件的第二外部电极电连接。

公开(公告)号：US06258632B1

公开(公告)日：2001-07-10

申请号：US09132716

申请日：1998-08-12

Applicant: Naoto Takebe

Inventor： Naoto Takebe

IPC: H01L2144

CPC classification number: H01L21/568 ,  H01L21/4832 ,  H01L21/565 ,  H01L23/3107 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/4554 ,  H01L2224/4556 ,  H01L2224/45639 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4845 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78743 ,  H01L2224/85001 ,  H01L2224/85045 ,  H01L2224/85186 ,  H01L2224/85203 ,  H01L2224/85951 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/18165 ,  H01L2924/00014 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/00012

Abstract: One end of bonding wires made of aluminium, gold, etc., is connected to a plurality of electrode pads formed on the main surface of a semiconductor chip. The other end of these bonding wires is exposed on the surface of the molded resin unit. Connecting electrodes made of aluminium are formed on top of the exposed parts of these bonding wires. The semiconductor chip and external circuitry are connected electrically by means of these connecting electrodes.

Abstract translation: 由铝，金等制成的接合线的一端连接到形成在半导体芯片的主表面上的多个电极焊盘。 这些接合线的另一端露出在模制树脂单元的表面上。 在这些接合线的暴露部分的顶部形成有由铝制成的连接电极。 半导体芯片和外部电路通过这些连接电极电连接。