发明授权
- 专利标题： Relaxor-PT ferroelectric single crystals
- 专利标题（中）： Relaxor-PT铁电单晶
-
申请号： US12724832申请日： 2010-03-16
-
公开(公告)号： US08241519B2公开(公告)日： 2012-08-14
- 发明人: Jun Luo , Wesley S. Hackenberger , Shujun Zhang , Richard J. Meyer, Jr. , Thomas R. Shrout , Nevin P. Sherlock
- 申请人： Jun Luo , Wesley S. Hackenberger , Shujun Zhang , Richard J. Meyer, Jr. , Thomas R. Shrout , Nevin P. Sherlock
- 申请人地址： US PA State College US PA University Park
- 专利权人： TRS Technologies, Inc.,Penn State Research Foundation
- 当前专利权人： TRS Technologies, Inc.,Penn State Research Foundation
- 当前专利权人地址： US PA State College US PA University Park
- 代理机构： McNees Wallace & Nurick LLC
- 主分类号： C04B35/00
- IPC分类号： C04B35/00 ; H01L41/18 ; H01L41/00
摘要：
A domain engineered relaxor-PT single crystals having a dielectric loss of about 0.2%, a high electromechanical coupling factor greater than about 85%, and high mechanical quality factor greater than about 500 is disclosed. In one embodiment, the relaxor-PT material has the general formula, Pb(B1B2)O3—Pb(B3)O3, where B1 may be one ion or combination of Mg2+, Zn2+, Ni2+, Sc3+, In3+, Yb3+, B2 may be one ion or combination of Nb5+, Ta5+, W6+, and B3 may be Ti4+ or combination of Ti4+ with Zr4+ and/or Hf4+.
公开/授权文献
- US20110017937A1 RELAXOR-PT FERROELECTRIC SINGLE CRYSTALS 公开/授权日：2011-01-27
信息查询
