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    Method of making ternary piezoelectric crystals
    4.
    发明授权
    Method of making ternary piezoelectric crystals 有权
    制造三元压电晶体的方法

    公开(公告)号：US07972527B2

    公开(公告)日：2011-07-05

    申请号：US12023646

    申请日：2008-01-31

    申请人： Jun Luo ,  Wesley S. Hackenberger

    发明人： Jun Luo ,  Wesley S. Hackenberger

    IPC分类号： H01L47/187 ,  C04B35/499

    CPC分类号： H01L41/41 ,  C30B11/00 ,  C30B29/22 ,  C30B29/30 ,  C30B29/32 ,  H01L41/18 ,  H01L41/1875

    摘要： A ternary single crystal relaxor piezoelectric grown from a novel melt using the Vertical Bridgeman method. The ternary single crystals are characterized by a Curie temperature, Tc, of at least 150° C. and a rhombohedral to tetragonal phase transition temperature, Trt, of at least about 110° C. The ternary crystals further exhibit a piezoelectric coefficient, d33, in the range of at least about 1200-2000 pC/N.

    摘要翻译： 使用Vertical Bridgeman方法从新型熔体生长的三元单晶弛豫压电体。 三元单晶的特征在​​于居里温度Tc至少为150℃，菱方相至四方相转变温度Trt为至少约110℃。三元晶体还表现出压电系数d33， 在至少约1200-2000pC / N的范围内。

    Magnetic field-modulated transverse flux multiphase permanent magnet motor
    5.
    发明授权
    Magnetic field-modulated transverse flux multiphase permanent magnet motor 有权
    磁场调制横向磁通多相永磁电动机

    公开(公告)号：US09362789B2

    公开(公告)日：2016-06-07

    申请号：US14129282

    申请日：2012-07-03

    申请人： Baoquan Kou ,  Dagang Xie ,  Jun Luo ,  Guolong Yang

    发明人： Baoquan Kou ,  Dagang Xie ,  Jun Luo ,  Guolong Yang

    IPC分类号： H02K21/12 ,  H02K1/27 ,  H02K21/04 ,  H02K3/12

    CPC分类号： H02K1/2706 ,  H02K3/12 ,  H02K21/046

    摘要： A magnetic field-modulated transverse flux multiphase permanent magnet motor consisting of a stator and a rotor. A number m of phase armature units are arranged in a row along the axial direction within a motor housing (1); each successive phase armature unit is offset in the circumferential direction by an electrical angle of 360°/m; the armature coil (2) is embedded within an annular cavity between the first to the third stator iron core tooth segments (3, 4, 5); the external circumferential surfaces of the first and the third rotor iron core tooth segments (6, 8) are respectively grooved in the axial direction with k/2 permanent magnet slots; the rotor permanent magnet slot on the first rotor iron core tooth segment (6) is axially offset from the rotor permanent magnet slot on the third rotor iron core tooth segment (8) by one-half the rotor tooth pitch; the direction of magnetization of the rotor permanent magnets (9) is identical. The present motor features high reliability and high security, high fault tolerance, structural simplicity, low costs, high torque density, good dynamic characteristics and ease of modularization.

    摘要翻译： 由定子和转子组成的磁场调制横向磁通多相永磁电动机。 多个相电枢单元沿着轴向方向布置在马达壳体（1）内; 每个连续相电枢单元在圆周方向上偏移360°/ m的电角度; 电枢线圈（2）嵌入在第一至第三定子铁芯齿段（3,4,5）之间的环形空腔内。 第一和第三转子铁芯齿段（6,8）的外圆周表面分别在轴向上与k / 2个永久磁铁槽沟槽; 第一转子铁芯齿段（6）上的转子永磁体槽位于第三转子铁芯齿段（8）上的转子永磁体狭槽的一半转子齿距上; 转子永磁体（9）的磁化方向相同。 本电机具有高可靠性，高安全性，高容错性，结构简单性，低成本，高扭矩密度，良好的动态特性和易于模块化的特点。

    IMAGE PROCESSING DEVICE AND METHOD, PROGRAM, AND RECORDING MEDIUM
    6.
    发明申请
    IMAGE PROCESSING DEVICE AND METHOD, PROGRAM, AND RECORDING MEDIUM 有权
    图像处理设备和方法，程序和记录介质

    公开(公告)号：US20140226726A1

    公开(公告)日：2014-08-14

    申请号：US14343062

    申请日：2012-10-05

    申请人： Masatoshi Yokokawa ,  Takefumi Nagumo ,  Jun Luo

    发明人： Masatoshi Yokokawa ,  Takefumi Nagumo ,  Jun Luo

    IPC分类号： H04N19/55

    CPC分类号： H04N19/55 ,  H04N19/117 ,  H04N19/136 ,  H04N19/167 ,  H04N19/182 ,  H04N19/51 ,  H04N19/82 ,  H04N19/86

    摘要： The present technique relates to an image processing device, an image processing method, a program, and a recording medium that enable more accurate block noise correction without degradation of image quality.A motion predicting unit detects, from a criteria image and a reference image, the motion vector of each of blocks constituting an image. A motion compensating unit generates a motion-compensated image by performing motion compensation on the reference image, using the motion vectors. A correction value calculating unit calculates a correction value for correcting the pixel value of a current pixel in a current block in the motion-compensated image based on a boundary difference value between the criteria image and the motion-compensated image, the boundary difference value being a difference value with respect to the pixel value of a boundary pixel in a boundary portion adjacent to an adjacent block in the current block. An adding unit adds the correction value to the pixel value of the current pixel in the motion-compensated image. The present technique can be applied to image processing devices.

    摘要翻译： 本技术涉及能够在不降低图像质量的情况下实现更精确的块噪声校正的图像处理装置，图像处理方法，程序和记录介质。 运动预测单元从标准图像和参考图像检测构成图像的每个块的运动矢量。 运动补偿单元通过使用运动矢量对参考图像执行运动补偿来生成运动补偿图像。 校正值计算单元基于标准图像和运动补偿图像之间的边界差值，计算用于校正运动补偿图像中的当前像素中的当前像素的像素值的校正值，边界差值为 相对于当前块中与相邻块相邻的边界部分中的边界像素的像素值的差值。 添加单元将校正值与运动补偿图像中的当前像素的像素值相加。 本技术可以应用于图像处理装置。

    Schottky junction source/drain transistor and method of making
    7.
    发明授权
    Schottky junction source/drain transistor and method of making 失效
    肖特基结源极/漏极晶体管及其制造方法

    公开(公告)号：US08697529B2

    公开(公告)日：2014-04-15

    申请号：US13508731

    申请日：2011-09-28

    申请人： Dongping Wu ,  Jun Luo ,  Yinghua Piao ,  Zhiwei Zhu ,  Shili Zhang ,  Wei Zhang

    发明人： Dongping Wu ,  Jun Luo ,  Yinghua Piao ,  Zhiwei Zhu ,  Shili Zhang ,  Wei Zhang

    IPC分类号： H01L21/336 ,  H01L21/338

    CPC分类号： H01L29/7839 ,  H01L29/6653 ,  H01L29/66848

    摘要： A method of making a transistor, comprising: providing a semiconductor substrate; forming a gate stack over the semiconductor substrate; forming an insulating layer over the semiconductor substrate; forming a depleting layer over the insulating layer; etching the depleting layer and the insulating layer; forming a metal layer over the semiconductor substrate; performing thermal annealing; and removing the metal layer. As advantages of the present invention, an upper outside part of each of the sidewalls include a material that can react with the metal layer, so that metal on two sides of the sidewalls is absorbed during the annealing process, preventing the metal from diffusing toward the semiconductor layer, and ensuring that the formed Schottky junctions can be ultra-thin and uniform, and have controllable and suppressed lateral growth.

    摘要翻译： 一种制造晶体管的方法，包括：提供半导体衬底; 在所述半导体衬底上形成栅叠层; 在半导体衬底上形成绝缘层; 在绝缘层上形成耗尽层; 蚀刻耗尽层和绝缘层; 在所述半导体衬底上形成金属层; 进行热退火; 并去除金属层。 作为本发明的优点，每个侧壁的上部外侧部分包括能够与金属层反应的材料，从而在退火过程中吸收侧壁两侧的金属，从而防止金属朝向 半导体层，并且确保形成的肖特基结可以是超薄和均匀的，并且具有可控和抑制的横向生长。

    METHOD AND DEVICE FOR EXTRACTING SKELETON TOPOLOGY STRUCTURE OF ELECTRIC POWER GRID
    8.
    发明申请
    METHOD AND DEVICE FOR EXTRACTING SKELETON TOPOLOGY STRUCTURE OF ELECTRIC POWER GRID 审中-公开
    提取电力网格骨架拓扑结构的方法与装置

    公开(公告)号：US20140088894A1

    公开(公告)日：2014-03-27

    申请号：US14123007

    申请日：2012-04-16

    申请人： Jin Dong ,  Jun Luo ,  Xin Jie Lv ,  Hai Rong Lv ,  Qi Ming Tian ,  Wen Jun Yin

    发明人： Jin Dong ,  Jun Luo ,  Xin Jie Lv ,  Hai Rong Lv ,  Qi Ming Tian ,  Wen Jun Yin

    IPC分类号： G01R21/133

    摘要： A system and method for extracting a skeleton topology structure for an electric power grid, the method comprising: receiving a description of a topology sub-structure corresponding with user's need and a description of skeleton topology sub-structure extracted from the topology sub-structure; generating a first incidence matrix based on the description of the topology sub-structure and a second incidence matrix based on the description of the skeleton topology sub-structure; generating a third incidence matrix based on a primary topology structure of electric power grid; searching from the third incidence matrix a sub-matrix that matches the first incidence matrix; obtaining a fourth incidence matrix by using the second incidence matrix to transform the matching sub-matrix; and generating a skeleton topology structure corresponding to the primary topology structure based on the fourth incidence matrix.

    摘要翻译： 一种用于提取电网的骨架拓扑结构的系统和方法，所述方法包括：接收与用户需要对应的拓扑子结构的描述和从拓扑子结构提取的骨架拓扑子结构的描述; 基于对拓扑子结构的描述和基于骨架拓扑子结构的描述的第二入射矩阵生成第一入射矩阵; 基于电网的主拓扑结构生成第三入射矩阵; 从所述第三入射矩阵搜索与所述第一入射矩阵匹配的子矩阵; 通过使用第二入射矩阵来获得第四入射矩阵以变换匹配子矩阵; 以及基于所述第四入射矩阵生成与所述主拓扑结构相对应的骨架拓扑结构。

    Method for manufacturing semiconductor device
    9.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08642433B2

    公开(公告)日：2014-02-04

    申请号：US13509551

    申请日：2011-12-05

    申请人： Huicai Zhong ,  Jun Luo ,  Chao Zhao ,  Qingqing Liang

    发明人： Huicai Zhong ,  Jun Luo ,  Chao Zhao ,  Qingqing Liang

    IPC分类号： H01L21/336 ,  H01L21/477

    CPC分类号： H01L29/6653 ,  H01L29/78

    摘要： A method for manufacturing a semiconductor device is disclosed, comprising: providing a substrate, a gate region on the substrate and a semiconductor region at both sides of the gate region; forming sacrificial spacers, which cover a portion of the semiconductor region, on sidewalls of the gate region; forming a metal layer on a portion of the semiconductor region outside the sacrificial spacers and on the gate region; removing the sacrificial spacers; performing annealing so that the metal layer reacts with the semiconductor region to form a metal-semiconductor compound layer on the semiconductor region; and removing unreacted metal layer. By separating the metal layer from the channel and the gate region of the device with the thickness of the sacrificial spacers, the effect of metal layer diffusion on the channel and the gate region is reduced and performance of the device is improved.

    摘要翻译： 公开了一种制造半导体器件的方法，包括：提供衬底，衬底上的栅极区域和栅极区两侧的半导体区域; 在所述栅极区域的侧壁上形成覆盖所述半导体区域的一部分的牺牲间隔物; 在牺牲间隔物外部和栅极区域上的半导体区域的一部分上形成金属层; 去除牺牲隔离物; 进行退火，使得金属层与半导体区域反应，以在半导体区域上形成金属 - 半导体化合物层; 并除去未反应的金属层。 通过将金属层与器件的栅极区域与牺牲间隔物的厚度分开，金属层扩散对沟道和栅极区域的影响降低，并且器件的性能得到改善。

    Semiconductor device structure and method for manufacturing the same
    10.
    发明授权
    Semiconductor device structure and method for manufacturing the same 有权
    半导体器件结构及其制造方法

    公开(公告)号：US08492206B2

    公开(公告)日：2013-07-23

    申请号：US13375692

    申请日：2011-08-29

    申请人： Huicai Zhong ,  Jun Luo ,  Qingqing Liang ,  Huilong Zhu

    发明人： Huicai Zhong ,  Jun Luo ,  Qingqing Liang ,  Huilong Zhu

    IPC分类号： H01L21/335 ,  H01L21/70

    CPC分类号： H01L21/823431 ,  H01L21/823475 ,  H01L27/0886 ,  H01L27/1211

    摘要： A semiconductor device structure and a method for manufacturing the same are disclosed. In one embodiment, the method comprises: forming a fin in a first direction on a semiconductor substrate; forming a gate line in a second direction crossing the first direction on the semiconductor substrate, the gate line intersecting the fin via a gate dielectric layer; forming a dielectric spacer surrounding the gate line; forming a conductive spacer surrounding the dielectric spacer; and performing inter-device electrical isolation at a predetermined region, wherein isolated portions of the gate line form gate electrodes of respective unit devices, and isolated portions of the conductive spacer form contacts of the respective unit devices.

    摘要翻译： 公开了一种半导体器件结构及其制造方法。 在一个实施例中，所述方法包括：在半导体衬底上沿第一方向形成翅片; 在半导体衬底上与第一方向交叉的第二方向上形成栅极线，栅极线经由栅极电介质层与鳍状物相交; 形成围绕所述栅极线的介电隔离层; 形成围绕所述电介质间隔物的导电间隔物; 以及在预定区域执行器件间电隔离，其中栅极线的隔离部分形成各个单元器件的栅电极，并且导电间隔物的隔离部分形成各个单元器件的接触。