Invention Grant
- Patent Title: Method of fabricating a back-illuminated image sensor
- Patent Title (中): 制造背照式图像传感器的方法
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Application No.: US13123661Application Date: 2009-09-22
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Publication No.: US08241942B2Publication Date: 2012-08-14
- Inventor: Konstantin Bourdelle , Carlos Mazure
- Applicant: Konstantin Bourdelle , Carlos Mazure
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: EP08291227 20081222
- International Application: PCT/EP2009/006845 WO 20090922
- International Announcement: WO2010/072278 WO 20100701
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/30 ; H01L21/04 ; H01L21/425
Abstract:
A method of fabricating a back-illuminated image sensor that includes the steps of providing a first substrate of a semiconductor layer, in particular a silicon layer, forming electronic device structures over the semiconductor layer and, only then, doping the semiconductor layer. By doing so, improved dopant profiles and electrical properties of photodiodes can be achieved such that the final product, namely an image sensor, has a better quality.
Public/Granted literature
- US20110287571A1 METHOD OF FABRICATING A BACK-ILLUMINATED IMAGE SENSOR Public/Granted day:2011-11-24
Information query
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