发明授权
US08241946B2 Method of forming an organic semiconducting device by a melt technique
有权
通过熔融技术形成有机半导体器件的方法
- 专利标题： Method of forming an organic semiconducting device by a melt technique
- 专利标题（中）： 通过熔融技术形成有机半导体器件的方法
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申请号： US11568192申请日： 2005-04-22
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公开(公告)号： US08241946B2公开(公告)日： 2012-08-14
- 发明人: Sepas Setayesh , Dagobert M. de Leeuw , Natalie Stutzmann-Stingelin
- 申请人： Sepas Setayesh , Dagobert M. de Leeuw , Natalie Stutzmann-Stingelin
- 申请人地址： NL Breda
- 专利权人： Creator Technology B.V.
- 当前专利权人： Creator Technology B.V.
- 当前专利权人地址： NL Breda
- 国际申请： PCT/IB2005/051330 WO 20050422
- 国际公布： WO2005/104265 WO 20051103
- 主分类号： H01L51/40
- IPC分类号： H01L51/40 ; H01L51/05 ; H01L29/08
摘要：
The present invention provides a method of forming a semiconducting device comprising an organic semiconducting material, which method comprises: heating a composition comprising the organic semiconducting material to a temperature at or above the melting point or glass transition temperature of the composition to form a melt; cooling the melt to a temperature below the melting point or glass transition temperature of the composition; and wherein a first substance or object capable of inhibiting and/or preventing dewetting is adjacent the composition before or during heating, or the composition further comprises an agent capable of inhibiting and/or preventing dewetting.
公开/授权文献
- US20080254568A1 Composition and Method of Forming a Device 公开/授权日：2008-10-16
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