Invention Grant
US08241988B2 Photo key and method of fabricating semiconductor device using the photo key
有权
使用照片键制造半导体器件的照片键和方法
- Patent Title: Photo key and method of fabricating semiconductor device using the photo key
- Patent Title (中): 使用照片键制造半导体器件的照片键和方法
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Application No.: US13204752Application Date: 2011-08-08
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Publication No.: US08241988B2Publication Date: 2012-08-14
- Inventor: Byoung-ho Kwon , Chang-ki Hong , Bo-un Yoon , Jae-dong Lee , Sang-jin Kim
- Applicant: Byoung-ho Kwon , Chang-ki Hong , Bo-un Yoon , Jae-dong Lee , Sang-jin Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2008-0088918 20080909
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/00 ; H01L21/66 ; G01R31/26
Abstract:
A photo key has a plurality of first regions spaced apart from one another on a semiconductor substrate, and a second region surrounding the first regions, and one of the first regions and the second region constitutes a plurality of photo key regions spaced apart from one another. Each of the photo key regions includes a plurality of first conductive patterns spaced apart from one another; and a plurality of second conductive patterns interposed between the first conductive patterns.
Public/Granted literature
- US20110294285A1 PHOTO KEY AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE PHOTO KEY Public/Granted day:2011-12-01
Information query
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