发明授权
US08241988B2 Photo key and method of fabricating semiconductor device using the photo key
有权
使用照片键制造半导体器件的照片键和方法
- 专利标题： Photo key and method of fabricating semiconductor device using the photo key
- 专利标题（中）： 使用照片键制造半导体器件的照片键和方法
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申请号： US13204752申请日： 2011-08-08
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公开(公告)号： US08241988B2公开(公告)日： 2012-08-14
- 发明人: Byoung-ho Kwon , Chang-ki Hong , Bo-un Yoon , Jae-dong Lee , Sang-jin Kim
- 申请人： Byoung-ho Kwon , Chang-ki Hong , Bo-un Yoon , Jae-dong Lee , Sang-jin Kim
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2008-0088918 20080909
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/00 ; H01L21/66 ; G01R31/26
摘要：
A photo key has a plurality of first regions spaced apart from one another on a semiconductor substrate, and a second region surrounding the first regions, and one of the first regions and the second region constitutes a plurality of photo key regions spaced apart from one another. Each of the photo key regions includes a plurality of first conductive patterns spaced apart from one another; and a plurality of second conductive patterns interposed between the first conductive patterns.
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