Invention Grant
- Patent Title: Air gap fabricating method
- Patent Title (中): 气隙制造方法
-
Application No.: US12649333Application Date: 2009-12-30
-
Publication No.: US08241990B2Publication Date: 2012-08-14
- Inventor: Wei-Su Chen
- Applicant: Wei-Su Chen
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW98145665A 20091229
- Main IPC: H01L21/76
- IPC: H01L21/76

Abstract:
An air gap fabricating method is provided. A patterned sacrificial layer is formed over a substrate, and the material of the patterned sacrificial layer includes a germanium-antimony-tellurium alloy. A dielectric layer is formed on the patterned sacrificial layer. A reactant is provided to react with the patterned sacrificial layer and the patterned sacrificial layer is removed to form a structure with an air gap disposed at the original position of the patterned sacrificial layer.
Public/Granted literature
- US20110156201A1 AIR GAP FABRICATING METHOD Public/Granted day:2011-06-30
Information query
IPC分类: