发明授权
- 专利标题： Engineering emission wavelengths in laser and light emitting devices
- 专利标题（中）： 激光和发光器件中的工程发射波长
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申请号： US12821643申请日： 2010-06-23
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公开(公告)号： US08242480B2公开(公告)日： 2012-08-14
- 发明人: Lionel C. Kimerling , Jifeng Liu , Jurgen Michel
- 申请人： Lionel C. Kimerling , Jifeng Liu , Jurgen Michel
- 申请人地址： US MA Cambridge
- 专利权人： Massachusetts Institute of Technology
- 当前专利权人： Massachusetts Institute of Technology
- 当前专利权人地址： US MA Cambridge
- 代理机构： Gesmer Updegrove LLP
- 主分类号： H01L29/12
- IPC分类号： H01L29/12
摘要：
A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers and the at least one second semiconductor material layers. The at least one first semiconductor layers and the at least one second material layers have a larger band gap than the at least one near-direct band gap material layers. The at least one near-direct band gap material layers have an energy difference between the direct and indirect band gaps of less than 0.5 eV.
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