发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US11651076申请日: 2007-01-09
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公开(公告)号: US08242541B2公开(公告)日: 2012-08-14
- 发明人: Takayuki Sasaki , Yasuto Igarashi , Naozumi Morino
- 申请人: Takayuki Sasaki , Yasuto Igarashi , Naozumi Morino
- 申请人地址: JP Kawasaki-shi
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi
- 代理机构: Miles & Stockbridge P.C.
- 优先权: JP2006-57146 20060303
- 主分类号: H01L27/118
- IPC分类号: H01L27/118
摘要:
A technique which reduces the influence of external noise such as crosstalk noise in a semiconductor device to prevent a circuit from malfunctioning. A true signal wire and a bar signal wire which are susceptible to noise and part of an input signal line to a level shifter circuit, and shield wires for shielding these signal wires are laid on an I/O cell. Such I/O cells are placed side by side to complete a true signal wire connection and a bar signal wire connection. These wires are arranged in a way to pass over a plurality of I/O cells and are parallel to each other or multilayered.
公开/授权文献
- US20070206781A1 Semiconductor device 公开/授权日:2007-09-06