发明授权
- 专利标题: Planar RF electromechanical switch
- 专利标题(中): 平面RF机电开关
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申请号: US12352914申请日: 2009-01-13
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公开(公告)号: US08242865B1公开(公告)日: 2012-08-14
- 发明人: David T. Chang , Tsung-Yuan Hsu
- 申请人: David T. Chang , Tsung-Yuan Hsu
- 申请人地址: US CA Malibu
- 专利权人: HRL Laboratories, LLC
- 当前专利权人: HRL Laboratories, LLC
- 当前专利权人地址: US CA Malibu
- 代理机构: Ladas & Parry
- 主分类号: H01H51/22
- IPC分类号: H01H51/22
摘要:
A micromachined switch is provided including a base substrate, a bond pad on the base substrate, a cantilever arm connected to the bond pad, the cantilever arm having a conductive via from the bond pad, a first actuation electrode on the base substrate, and a second actuation electrode on the cantilever arm connected to the bond pad by way of the conductive via, positioned such that an actuation voltage applied between the first actuation electrode and the second actuation electrode will deform the cantilever arm, wherein the first actuation electrode is facing a side of the cantilever arm opposite the second actuation electrode.
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