发明授权
- 专利标题: Double patterning friendly lithography method and system
- 专利标题(中): 双重图案友好光刻方法和系统
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申请号: US12549087申请日: 2009-08-27
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公开(公告)号: US08245174B2公开(公告)日: 2012-08-14
- 发明人: Yi-Kan Cheng , Ru-Gun Liu , Lee-Chung Lu
- 申请人: Yi-Kan Cheng , Ru-Gun Liu , Lee-Chung Lu
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Duane Morris LLP
- 代理商 Steven E. Koffs
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
A method includes receiving an identification of a plurality of cells to be included in an integrated circuit (IC) layout, including a list of pairs of cells within the plurality of cells to be connected to each other. First routing paths are identified, to connect a maximum number of the pairs of cells using one-dimensional (1-D) routing between cells within those pairs of cells. Second routing paths are selected from a predetermined set of two-dimensional (2-D) routing patterns to connect any of the pairs of cells which cannot be connected by 1-D routing. The first and second routing paths are output to a machine readable storage medium to be read by a control system for controlling a semiconductor fabrication process to fabricate the IC.
公开/授权文献
- US20110023002A1 DOUBLE PATTERNING FRIENDLY LITHOGRAPHY METHOD AND SYSTEM 公开/授权日:2011-01-27
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