Method of integrating a MOSFET with a capacitor

Invention Grant

US08247288B2 Method of integrating a MOSFET with a capacitor 有权

Title translation: 将MOSFET与电容器集成的方法

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Patent Title: Method of integrating a MOSFET with a capacitor
Patent Title (中): 将MOSFET与电容器集成的方法
Application No.: US12947717

Application Date: 2010-11-16
Publication No.: US08247288B2

Publication Date: 2012-08-21
Inventor: Yan Xun Xue , Anup Bhalla , Hamza Yilmaz , Jun Lu
Applicant: Yan Xun Xue , Anup Bhalla , Hamza Yilmaz , Jun Lu
Applicant Address: US CA Sunnyvale
Assignee: Alpha & Omega Semiconductor Inc.
Current Assignee: Alpha & Omega Semiconductor Inc.
Current Assignee Address: US CA Sunnyvale
Agency: CH Emily LLC
Agent Chein-Hwa Tsao
Main IPC: H01L21/8242
IPC: H01L21/8242

Method of integrating a MOSFET with a capacitor

Abstract:

A bypass capacitor is directly integrated on top of a MOSFET chip. The capacitor comprises multi layers of conductive material and dielectric material staking on top of each other with connection vias through dielectric layer for connecting different conductive layers. The method of integrating the bypass capacitor comprises repeating steps of depositing a dielectric layer, forming connection vias through the dielectric layer, depositing a conductive layer and patterning the conductive layer.

Abstract(Chinese):

旁路电容直接集成在MOSFET芯片的顶部。电容器包括多层导电材料和电介质材料，它们通过介电层连接不同导电层的连接通孔彼此顶部。集成旁路电容器的方法包括沉积介电层的重复步骤，形成通过电介质层的连接通孔，沉积导电层和图案化导电层。

Public/Granted literature

US20110059593A1 Method of Integrating a MOSFET with a Capacitor Public/Granted day:2011-03-10

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）