Capacitor and manufacturing method thereof

Invention Grant

US08247289B2 Capacitor and manufacturing method thereof 有权

Title translation: 电容器及其制造方法

Please log in to see more content

Patent Title: Capacitor and manufacturing method thereof
Patent Title (中): 电容器及其制造方法
Application No.: US11508141

Application Date: 2006-08-23
Publication No.: US08247289B2

Publication Date: 2012-08-21
Inventor: Yoshiki Yamanishi , Muneo Harada , Takahiro Kitano , Tatsuzo Kawaguchi , Yoshihiro Hirota , Kinji Yamada , Tomotaka Shinoda , Katsuya Okumura , Shuichi Kawano
Applicant: Yoshiki Yamanishi , Muneo Harada , Takahiro Kitano , Tatsuzo Kawaguchi , Yoshihiro Hirota , Kinji Yamada , Tomotaka Shinoda , Katsuya Okumura , Shuichi Kawano
Applicant Address: JP Gifu
Assignee: Ibiden Co., Ltd.
Current Assignee: Ibiden Co., Ltd.
Current Assignee Address: JP Gifu
Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
Priority: JP2005-243180 20050824
Main IPC: H01L21/8242
IPC: H01L21/8242 ; H01L21/20 ; H01L21/00

Capacitor and manufacturing method thereof

Abstract:

A capacitor having a high quality and a manufacturing method of the same are provided.A capacitor has a lower electrode formed on an oxide film, a dielectric layer formed on the lower electrode, an upper electrode formed so as to face the lower electrode with the dielectric layer between, and an upper electrode formed so as to cover the upper electrode, an opening portion of the upper electrode and an opening portion of the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to pattern the dielectric layer by using the upper electrode as a mask, and provide a capacitor having a high-quality dielectric layer by preventing impurity diffusion into the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to prevent the dielectric layer from being exposed to etching liquid, liquid developer, etc.

Abstract(Chinese):

提供了具有高质量的电容器及其制造方法。电容器具有形成在氧化膜上的下电极，形成在下电极上的电介质层，形成为与电极之间介电层相对的下电极的上电极和形成为覆盖上电极的上电极，上电极的开口部分和电介质层的开口部分。通过在电介质层上形成上电极，可以通过使用上电极作为掩模对电介质层进行图案化，并且通过防止杂质扩散到电介质层中来提供具有高质量电介质层的电容器。通过在电介质层上形成上部电极，可以防止电介质层暴露于蚀刻液体，液体显影剂等

Public/Granted literature

US20070181928A1 Capacitor and manufacturing method thereof Public/Granted day:2007-08-09

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）