公开(公告)号：US07742277B2

公开(公告)日：2010-06-22

申请号：US11508204

申请日：2006-08-23

申请人： Tomotaka Shinoda ,  Kinji Yamada ,  Takahiro Kitano ,  Yoshiki Yamanishi ,  Muneo Harada ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Katsuya Okumura ,  Shuichi Kawano

发明人： Tomotaka Shinoda ,  Kinji Yamada ,  Takahiro Kitano ,  Yoshiki Yamanishi ,  Muneo Harada ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Katsuya Okumura ,  Shuichi Kawano

IPC分类号： H01G4/06 ,  H01G4/005

CPC分类号： H01L28/65 ,  H01L27/11507 ,  H01L28/55 ,  Y10T29/435

摘要： A dielectric film capacitor includes a lower electrode having an opening and formed of a material including platinum, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film. The planar area of the lower electrode is 50% or more of the area of a formation region of the dielectric film. A dielectric film capacitor includes a lower electrode formed of a material including platinum and having a thickness of 10 to 100 nm, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film.

摘要翻译： 电介质膜电容器包括具有开口并由包括铂的材料形成的下电极，设置在下电极上并包括具有ABOx晶体结构的氧化物的电介质膜和设置在电介质膜上的上电极。 下部电极的平面面积为电介质膜的形成区域的面积的50％以上。 电介质膜电容器包括由包括铂的材料形成的厚度为10至100nm的下电极，设置在下电极上并包括具有ABOx晶体结构的氧化物的电介质膜，以及设置在电介质上的上电极 电影。

公开(公告)号：US08247289B2

公开(公告)日：2012-08-21

申请号：US11508141

申请日：2006-08-23

申请人： Yoshiki Yamanishi ,  Muneo Harada ,  Takahiro Kitano ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Kinji Yamada ,  Tomotaka Shinoda ,  Katsuya Okumura ,  Shuichi Kawano

发明人： Yoshiki Yamanishi ,  Muneo Harada ,  Takahiro Kitano ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Kinji Yamada ,  Tomotaka Shinoda ,  Katsuya Okumura ,  Shuichi Kawano

IPC分类号： H01L21/8242 ,  H01L21/20 ,  H01L21/00

CPC分类号： H01L23/50 ,  H01G4/228 ,  H01G4/33 ,  H01L23/481 ,  H01L24/81 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01056 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H05K1/162 ,  H05K3/002 ,  H05K2201/09509 ,  H05K2201/096 ,  H05K2201/10378

摘要： A capacitor having a high quality and a manufacturing method of the same are provided.A capacitor has a lower electrode formed on an oxide film, a dielectric layer formed on the lower electrode, an upper electrode formed so as to face the lower electrode with the dielectric layer between, and an upper electrode formed so as to cover the upper electrode, an opening portion of the upper electrode and an opening portion of the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to pattern the dielectric layer by using the upper electrode as a mask, and provide a capacitor having a high-quality dielectric layer by preventing impurity diffusion into the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to prevent the dielectric layer from being exposed to etching liquid, liquid developer, etc.

摘要翻译： 提供了具有高质量的电容器及其制造方法。 电容器具有形成在氧化膜上的下电极，形成在下电极上的电介质层，形成为与电极之间介电层相对的下电极的上电极和形成为覆盖上电极的上电极 ，上电极的开口部分和电介质层的开口部分。 通过在电介质层上形成上电极，可以通过使用上电极作为掩模对电介质层进行图案化，并且通过防止杂质扩散到电介质层中来提供具有高质量电介质层的电容器。 通过在电介质层上形成上部电极，可以防止电介质层暴露于蚀刻液体，液体显影剂等

公开(公告)号：US20070181928A1

公开(公告)日：2007-08-09

申请号：US11508141

申请日：2006-08-23

申请人： Yoshiki Yamanishi ,  Muneo Harada ,  Takahiro Kitano ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Kinji Yamada ,  Tomotaka Shinoda ,  Katsuya Okumura ,  Shuichi Kawano

发明人： Yoshiki Yamanishi ,  Muneo Harada ,  Takahiro Kitano ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Kinji Yamada ,  Tomotaka Shinoda ,  Katsuya Okumura ,  Shuichi Kawano

IPC分类号： H01L29/94

CPC分类号： H01L23/50 ,  H01G4/228 ,  H01G4/33 ,  H01L23/481 ,  H01L24/81 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01056 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H05K1/162 ,  H05K3/002 ,  H05K2201/09509 ,  H05K2201/096 ,  H05K2201/10378

摘要： A capacitor having a high quality and a manufacturing method of the same are provided. A capacitor has a lower electrode formed on an oxide film, a dielectric layer formed on the lower electrode, an upper electrode formed so as to face the lower electrode with the dielectric layer between, and an upper electrode formed so as to cover the upper electrode, an opening portion of the upper electrode and an opening portion of the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to pattern the dielectric layer by using the upper electrode as a mask, and provide a capacitor having a high-quality dielectric layer by preventing impurity diffusion into the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to prevent the dielectric layer from being exposed to etching liquid, liquid developer, etc.

摘要翻译： 提供了具有高质量的电容器及其制造方法。 电容器具有形成在氧化膜上的下电极，形成在下电极上的电介质层，形成为与电极之间介电层相对的下电极的上电极和形成为覆盖上电极的上电极 ，上电极的开口部分和电介质层的开口部分。 通过在电介质层上形成上电极，可以通过使用上电极作为掩模对电介质层进行图案化，并且通过防止杂质扩散到电介质层中来提供具有高质量电介质层的电容器。 通过在电介质层上形成上部电极，可以防止电介质层暴露于蚀刻液体，液体显影剂等

公开(公告)号：US20070126041A1

公开(公告)日：2007-06-07

申请号：US11508204

申请日：2006-08-23

申请人： Tomotaka Shinoda ,  Kinji Yamada ,  Takahiro Kitano ,  Yoshiki Yamanishi ,  Muneo Harada ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Katsuya Okumura ,  Shuichi Kawano

发明人： Tomotaka Shinoda ,  Kinji Yamada ,  Takahiro Kitano ,  Yoshiki Yamanishi ,  Muneo Harada ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Katsuya Okumura ,  Shuichi Kawano

IPC分类号： H01L29/94 ,  H01L21/00

CPC分类号： H01L28/65 ,  H01L27/11507 ,  H01L28/55 ,  Y10T29/435

摘要： A dielectric film capacitor includes a lower electrode having an opening and formed of a material including platinum, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film. The planar area of the lower electrode is 50% or more of the area of a formation region of the dielectric film. A dielectric film capacitor includes a lower electrode formed of a material including platinum and having a thickness of 10 to 100 nm, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film.

摘要翻译： 电介质膜电容器包括具有开口并由包括铂的材料形成的下电极，设置在下电极上并包括具有ABOx晶体结构的氧化物的电介质膜和设置在电介质膜上的上电极。 下部电极的平面面积为电介质膜的形成区域的面积的50％以上。 电介质膜电容器包括由包括铂的材料形成的厚度为10至100nm的下电极，设置在下电极上并包括具有ABOx晶体结构的氧化物的电介质膜，以及设置在电介质上的上电极 电影。

公开(公告)号：US20070181556A1

公开(公告)日：2007-08-09

申请号：US11508156

申请日：2006-08-23

申请人： Yoshiki Yamanishi ,  Muneo Harada ,  Takahiro Kitano ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Kenji Matsuda ,  Kinji Yamada ,  Tomotaka Shinoda ,  Daohai Wang ,  Katsuya Okumura

发明人： Yoshiki Yamanishi ,  Muneo Harada ,  Takahiro Kitano ,  Tatsuzo Kawaguchi ,  Yoshihiro Hirota ,  Kenji Matsuda ,  Kinji Yamada ,  Tomotaka Shinoda ,  Daohai Wang ,  Katsuya Okumura

IPC分类号： F27B5/14

CPC分类号： H01L28/55

摘要： Atmosphere in processing apparatus is adjusted to, for example, oxygen atmosphere, by gas supply source and the like. Interior of thermal processing apparatus is set to oxygen atmosphere and raised to predetermined temperature. A wafer boat containing wafer W having dielectric precursor layer formed is loaded into thermal processing apparatus at speed at which no defects are produced in wafer W. Thereafter, reaction tube of thermal processing apparatus has its internal temperature raised to baking temperature, to perform baking for predetermined time. The wafer W is cooled to predetermined temperature in thermal processing apparatus and then to room temperature in processing apparatus, and carried out from processing apparatus. Before dielectric precursor layer is baked, it is maintained for predetermined time at temperature higher than temperature at which solvent in dielectric precursor layer is volatilized and lower than temperature at which dielectric precursor layer starts crystallization to vaporize residual solvent.

摘要翻译： 处理装置中的气氛通过气体供给源等调节为例如氧气氛。 热处理装置的内部设定为氧气氛并升温至规定温度。 包含形成有电介质前体层的晶片W的晶片舟以晶片W中没有产生缺陷的速度装载到热处理装置中。之后，热处理装置的反应管的内部温度升高到烘烤温度，进行烘烤 预定时间 将晶片W在热处理装置中冷却至规定温度，然后在处理装置中冷却至室温，并从处理装置进行。 在电介质前体层被烘烤之前，在高于电介质前体层中的溶剂挥发并且低于电介质前体层开始结晶以蒸发残留溶剂的温度的温度下将其保持预定时间。

公开(公告)号：US6011123A

公开(公告)日：2000-01-04

申请号：US974916

申请日：1997-11-20

申请人： Takahiko Kurosawa ,  Kinji Yamada ,  Minoru Matsubara ,  Yasutake Inoue ,  Tomotaka Shinoda ,  Kouhei Gotou

发明人： Takahiko Kurosawa ,  Kinji Yamada ,  Minoru Matsubara ,  Yasutake Inoue ,  Tomotaka Shinoda ,  Kouhei Gotou

IPC分类号： C08G77/455 ,  C08K5/5415 ,  C08L79/08 ,  C09D183/10 ,  H01L21/312 ,  C08L77/00

CPC分类号： H01L21/312 ,  C08G77/455 ,  C08K5/5415 ,  C08L79/08 ,  C09D183/10

摘要： A curable resin composition comprising (A) a hydrolyzate or a partial condensate of an organosilane compound, or both; (B) at least one compound selected from the group consisting of polyamic acids having a hydrolyzable silyl group or carboxylic acid anhydride group, or both, and polyimides having a hydrolyzable silyl group or carboxylic acid anhydride group, or both; and (C) a chelate compound or an alkoxide compound with a metal selected from the group consisting of zirconium, titanium, and aluminum, or both the chelate compound and the alkoxide compound. The resin composition can be cured and fabricated without producing no cracks into a cured product such as a semiconductor device having a low dielectric constant, high heat resistance and moisture resistance, superior adhesion to various substrate materials, superb electrical insulation properties, and low moisture absorption. Semiconductor devices using this curable resin composition as an insulating film exhibit a low electricity consumption, work at a high speed, and have excellent reliability.

摘要翻译： 一种可固化树脂组合物，其包含（A）有机硅烷化合物的水解产物或部分缩合物，或两者; （B）至少一种选自具有水解性甲硅烷基或羧酸酐基团的聚酰胺酸或二者的化合物和具有可水解甲硅烷基或羧酸酐基团的聚酰亚胺或两者; 和（C）螯合化合物或选自锆，钛和铝的金属的醇盐化合物，或螯合化合物和醇盐化合物两者。 可以固化和制造树脂组合物，而不会在诸如具有低介电常数，高耐热性和耐湿性，优异的各种基材的粘合性，优异的电绝缘性能和低吸湿性的半导体装置等固化产物中不产生裂纹 。 使用该固化性树脂组合物作为绝缘膜的半导体装置的电耗低，高速工作，可靠性优异。

公开(公告)号：US20050057884A1

公开(公告)日：2005-03-17

申请号：US10931995

申请日：2004-09-02

申请人： Kinji Yamada ,  Tomotaka Shinoda

发明人： Kinji Yamada ,  Tomotaka Shinoda

IPC分类号： C04B35/622 ,  C01G23/00 ,  C03C17/25 ,  C04B35/468 ,  C04B41/50 ,  C04B41/87 ,  H01B3/12 ,  H01G4/12 ,  B05D5/12

CPC分类号： C04B35/4682 ,  B82Y30/00 ,  C01G23/006 ,  C01P2002/34 ,  C01P2002/72 ,  C01P2004/64 ,  C03C17/25 ,  C03C2217/23 ,  C03C2218/11 ,  C04B35/6264 ,  C04B35/63 ,  C04B35/632 ,  C04B41/009 ,  C04B41/5041 ,  C04B41/87 ,  C04B2111/00844 ,  C04B2235/02 ,  C04B2235/3215 ,  C04B2235/3232 ,  C04B2235/3236 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/5481 ,  C04B2235/72 ,  H01G4/1209 ,  H01G4/1227 ,  C04B41/4539 ,  C04B41/4549 ,  C04B35/10 ,  C04B35/14 ,  C04B35/565 ,  C04B35/46 ,  C04B35/58 ,  C04B35/56 ,  C04B35/581

摘要： A dielectric-forming composition includes ABOx crystal particles 100 nm or less in mean particle diameter comprising specific metal species, and an organic solvent, and the composition satisfies at least one of the following conditions: (i) the concentration of the metal species A in the liquid phase is 1 mol % or less; and (ii) the water concentration in the composition is 1 wt % or less. A process for producing ABOx crystal particles 100 nm or less in mean particle diameter comprising specific metal species, the process includes (I) a dissolution step in which a specific organometallic compound having the metal species A and a specific organometallic compound having the metal species B are dissolved in an organic solvent; (II) a hydrolysis step in which water is added to the solution prepared in the dissolution step to perform hydrolysis of a precursor in the solution to form crystal particles; and (III) a purification step in which the crystal particles obtained in the hydrolysis step are purified with an organic solvent.

摘要翻译： 电介质形成组合物包含包含特定金属物质的平均粒径为100nm以下的ABOx结晶粒子和有机溶剂，该组成满足以下条件中的至少一个：（i）金属物质A的浓度 液相为1摩尔％以下; 和（ii）组合物中的水浓度为1重量％以下。 制造包含特定金属种类的平均粒径为100nm以下的ABOx结晶粒子的方法，该方法包括（I）溶解步骤，其中具有金属物质A的特定有机金属化合物和具有金属物质B的特定有机金属化合物 溶于有机溶剂; （II）水解步骤，其中向溶解步骤中制备的溶液中加入水以进行溶液中的前体水解以形成晶体颗粒; 和（III）纯化步骤，其中在水解步骤中获得的结晶颗粒用有机溶剂纯化。

公开(公告)号：US20060283354A1

公开(公告)日：2006-12-21

申请号：US11446903

申请日：2006-06-05

申请人： Tomotaka Shinoda ,  Masayuki Takahashi ,  Kinji Yamada ,  Kyouichirou Ryuu

发明人： Tomotaka Shinoda ,  Masayuki Takahashi ,  Kinji Yamada ,  Kyouichirou Ryuu

IPC分类号： C23C16/40 ,  H01L21/316 ,  B05D3/02

CPC分类号： C01G35/00 ,  C01G23/005 ,  C01G23/006 ,  C01G25/00 ,  C01G27/00 ,  C01G33/00 ,  C01P2002/72 ,  C04B35/468 ,  C23C18/1216 ,  H01L28/55

摘要： A method of producing a dielectric-film-forming composition including: (a) dissolving a metal hydroxide including a metal A which is at least one metal selected from Li, Na, Ca, Sr, and Ba and at least one of a metal alkoxide and a metal complex including a metal B which is at least one metal selected from Ti, Zr, Hf, Ta, and Nb in an organic solvent to prepare a solution; and (b) allowing a precursor in the solution prepared in the step (a) to react.

摘要翻译： 一种电介质膜形成用组合物的制造方法，其特征在于，包括：（a）溶解金属氢氧化物，所述金属氢氧化物包含金属A，所述金属A是选自Li，Na，Ca，Sr和Ba中的至少一种金属和至少一种金属醇盐 以及在有机溶剂中含有选自Ti，Zr，Hf，Ta和Nb中的至少一种金属的金属B的金属络合物，以制备溶液; 和（b）使步骤（a）中制备的溶液中的前体反应。

公开(公告)号：US06313233B1

公开(公告)日：2001-11-06

申请号：US09447952

申请日：1999-11-29

申请人： Takahiko Kurosawa ,  Kinji Yamada ,  Minoru Matsubara ,  Yasutake Inoue ,  Tomotaka Shinoda ,  Kouhei Gotou

发明人： Takahiko Kurosawa ,  Kinji Yamada ,  Minoru Matsubara ,  Yasutake Inoue ,  Tomotaka Shinoda ,  Kouhei Gotou

IPC分类号： C08G6548

CPC分类号： H01L21/02126 ,  C08G77/455 ,  C08K5/5415 ,  C08L79/08 ,  C09D183/10 ,  H01L21/312 ,  C08L2666/52

摘要： A curable resin composition comprising (A) a hydrolyzate or a partial condensate of an organosilane compound, or both; (B) at least one compound selected from the group consisting of polyamic acids having a hydrolyzable silyl group or carboxylic acid anhydride group, or both, and polyimides having a hydrolyzable silyl group or carboxylic acid anhydride group, or both; and (C) a chelate compound or an alkoxide compound with a metal selected from the group consisting of zirconium, titanium, and aluminum, or both the chelate compound and the alkoxide compound. The resin composition can be cured and fabricated without producing no cracks into a cured product such as a semiconductor device having a low dielectric constant, high heat resistance and moisture resistance, superior adhesion to various substrate materials, superb electrical insulation properties, and low moisture absorption. Semiconductor devices using this curable resin composition as an insulating film exhibit a low electricity consumption, work at a high speed, and have excellent reliability.

摘要翻译： 一种可固化树脂组合物，其包含（A）有机硅烷化合物的水解产物或部分缩合物，或两者; （B）至少一种选自具有水解性甲硅烷基或羧酸酐基团的聚酰胺酸或二者的化合物和具有可水解甲硅烷基或羧酸酐基团的聚酰亚胺或两者; 和（C）螯合化合物或选自锆，钛和铝的金属的醇盐化合物，或螯合化合物和醇盐化合物两者。 可以固化和制造树脂组合物，而不会在诸如具有低介电常数，高耐热性和耐湿性，优异的各种基材的粘合性，优异的电绝缘性能和低吸湿性的半导体装置等固化产物中不产生裂纹 。 使用该固化性树脂组合物作为绝缘膜的半导体装置的电耗低，高速工作，可靠性优异。

公开(公告)号：US06235101B1

公开(公告)日：2001-05-22

申请号：US09203534

申请日：1998-12-01

申请人： Takahiko Kurosawa ,  Kinji Yamada ,  Tomotaka Shinoda ,  Minoru Matsubara ,  Satoko Hakamatsuka

发明人： Takahiko Kurosawa ,  Kinji Yamada ,  Tomotaka Shinoda ,  Minoru Matsubara ,  Satoko Hakamatsuka

IPC分类号： C09D525

CPC分类号： H01L21/02126 ,  C08G77/58 ,  C09D183/14 ,  H01L21/02282 ,  H01L21/3121

摘要： A composition for film formation and a film obtained by heating the composition. The composition comprises: (A) a hydrolyzate and/or partial condensate of a compound represented by the following formula (1) R1nSi(OR2)4-n  (1) wherein R1 and R2 may be the same or different and each represent an alkyl group having 1 to 5 carbon atoms or an aryl group having 6 to 20 carbon atoms, and n is an integer of 1 or 2; (B) a metal chelate compound represented by the following formula (2) R3tM(OR4)s-t  (2) wherein R3 represents a chelating agent, M represents a metal atom, R4 represents an alkyl group having 2 to 5 carbon atoms or an aryl group having 6 to 20 carbon atoms, s represents a valence of the metal M, and t is an integer of 1 to s; (C) an organic solvent having a boiling point of 110 to 180° C.; and (D) &bgr;-diketone.

摘要翻译： 用于成膜的组合物和通过加热组合物获得的膜。组合物包含：（A）由下式（1）表示的化合物的水解产物和/或部分缩合物，其中R 1和R 2可以相同或不同， 各自表示碳原子数1〜5的烷基或碳原子数6〜20的芳基，n表示1或2的整数，（B）由下式（2）表示的金属螯合物，其中，R3表示 螯合剂，M表示金属原子，R4表示碳原子数2〜5的烷基或碳原子数6〜20的芳基，s表示金属M的化合价，t表示1〜s的整数。 ;（C）沸点为110〜180℃的有机溶剂。 和（D）β-二酮。