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发明授权
US08250289B2 Phase-change random access memory and method of setting boot block therein 有权
相变随机存取存储器及其中设置引导块的方法

Phase-change random access memory and method of setting boot block therein
摘要：
A semiconductor memory device includes a memory cell array and the memory cell array includes: a plurality of memory blocks and at least one setting unit. The at least one setting unit stores a location and a size of a boot data storage region within the plurality of memory blocks that stores boot data. The at least one setting units may include a register for setting usage of each memory block as a boot block. The semiconductor device may be a phase-change memory.
摘要（中）：

半导体存储器件包括存储单元阵列，存储单元阵列包括：多个存储块和至少一个设置单元。 所述至少一个设置单元将存储引导数据的多个存储块内的引导数据存储区域的位置和大小存储起来。 至少一个设置单元可以包括用于将每个存储器块的使用设置为引导块的寄存器。 半导体器件可以是相变存储器。

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