Invention Grant
US08250289B2 Phase-change random access memory and method of setting boot block therein
有权
相变随机存取存储器及其中设置引导块的方法
- Patent Title: Phase-change random access memory and method of setting boot block therein
- Patent Title (中): 相变随机存取存储器及其中设置引导块的方法
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Application No.: US12402006Application Date: 2009-03-11
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Publication No.: US08250289B2Publication Date: 2012-08-21
- Inventor: Yu-hwan Ro , Kwang-ho Kim , Kwang-jin Lee , Joon-yong Choi
- Applicant: Yu-hwan Ro , Kwang-ho Kim , Kwang-jin Lee , Joon-yong Choi
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2008-0023470 20080313
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F12/02

Abstract:
A semiconductor memory device includes a memory cell array and the memory cell array includes: a plurality of memory blocks and at least one setting unit. The at least one setting unit stores a location and a size of a boot data storage region within the plurality of memory blocks that stores boot data. The at least one setting units may include a register for setting usage of each memory block as a boot block. The semiconductor device may be a phase-change memory.
Public/Granted literature
- US20090235036A1 PHASE-CHANGE RANDOM ACCESS MEMORY AND METHOD OF SETTING BOOT BLOCK THEREIN Public/Granted day:2009-09-17
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