发明授权
- 专利标题： Method for forming copper wiring in a semiconductor device
- 专利标题（中）： 在半导体器件中形成铜布线的方法
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申请号： US12427870申请日： 2009-04-22
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公开(公告)号： US08252686B2公开(公告)日： 2012-08-28
- 发明人: Hyung Soon Park , Noh Jung Kwak , Seung Jin Yeom , Choon Kun Ryu , Jong Goo Jung , Sung Jun Kim
- 申请人： Hyung Soon Park , Noh Jung Kwak , Seung Jin Yeom , Choon Kun Ryu , Jong Goo Jung , Sung Jun Kim
- 申请人地址： KR Gyeonggi-do
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Ladas & Parry LLP
- 优先权： KR10-2009-0012418 20090216
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A process for forming a copper wiring and the prevention of copper ion migration in a semiconductor device is disclosed herein. The process includes conducting a post-cleaning process for a copper layer that is to form the cooper wiring after already having undergone a CMP process. The post-cleaning process includes conducting a primary chemical cleaning using a citric acid-based chemical. A secondary chemical cleaning is then conducted on the copper layer having undergone the primary chemical cleaning using an ascorbic acid-based chemical. After the post-cleaning process is completed, the migration of copper ions over time is prevented thereby improving the reliability of the semiconductor device.
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