Invention Grant
- Patent Title: Light-emitting diode chip structure and fabrication method thereof
- Patent Title (中): 发光二极管芯片结构及其制造方法
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Application No.: US13050677Application Date: 2011-03-17
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Publication No.: US08253160B2Publication Date: 2012-08-28
- Inventor: Jun-Rong Chen , Chi-Wen Kuo , Kun-Fu Huang , Jui-Yi Chu , Kuo-Lung Fang
- Applicant: Jun-Rong Chen , Chi-Wen Kuo , Kun-Fu Huang , Jui-Yi Chu , Kuo-Lung Fang
- Applicant Address: TW Hsinchu
- Assignee: Lextar Electronics Corp.
- Current Assignee: Lextar Electronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: Thomas |Kayden
- Priority: TW99144955A 20101221
- Main IPC: H01L33/20
- IPC: H01L33/20

Abstract:
A light-emitting diode chip structure including a conductive substrate, a semiconductor stacking layer and a patterned seed crystal layer is provided. The conductive substrate has a surface. The surface has a first region and a second region alternately distributed over the surface. The semiconductor stacking layer is disposed on the conductive substrate, and the surface of the conductive substrate faces the semiconductor stacking layer. The patterned seed crystal layer is disposed on the first region of the surface of the conductive substrate and between the conductive substrate and the semiconductor stacking layer. The patterned seed crystal layer separates the semiconductor stacking layer from the first region. The semiconductor stacking layer covers the patterned seed crystal layer and the second region, and is electrically connected to the conductive substrate through the second region. A fabrication method of the light-emitting diode chip structure is also provided.
Public/Granted literature
- US20120153339A1 LIGHT-EMITTING DIODE CHIP STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2012-06-21
Information query
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