发明授权
- 专利标题: Light-emitting diode chip structure and fabrication method thereof
- 专利标题(中): 发光二极管芯片结构及其制造方法
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申请号: US13050677申请日: 2011-03-17
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公开(公告)号: US08253160B2公开(公告)日: 2012-08-28
- 发明人: Jun-Rong Chen , Chi-Wen Kuo , Kun-Fu Huang , Jui-Yi Chu , Kuo-Lung Fang
- 申请人: Jun-Rong Chen , Chi-Wen Kuo , Kun-Fu Huang , Jui-Yi Chu , Kuo-Lung Fang
- 申请人地址: TW Hsinchu
- 专利权人: Lextar Electronics Corp.
- 当前专利权人: Lextar Electronics Corp.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Thomas |Kayden
- 优先权: TW99144955A 20101221
- 主分类号: H01L33/20
- IPC分类号: H01L33/20
摘要:
A light-emitting diode chip structure including a conductive substrate, a semiconductor stacking layer and a patterned seed crystal layer is provided. The conductive substrate has a surface. The surface has a first region and a second region alternately distributed over the surface. The semiconductor stacking layer is disposed on the conductive substrate, and the surface of the conductive substrate faces the semiconductor stacking layer. The patterned seed crystal layer is disposed on the first region of the surface of the conductive substrate and between the conductive substrate and the semiconductor stacking layer. The patterned seed crystal layer separates the semiconductor stacking layer from the first region. The semiconductor stacking layer covers the patterned seed crystal layer and the second region, and is electrically connected to the conductive substrate through the second region. A fabrication method of the light-emitting diode chip structure is also provided.