发明授权
US08258010B2 Making a semiconductor device having conductive through organic vias
有权
通过有机通孔制造具有导电性的半导体器件的方法
- 专利标题： Making a semiconductor device having conductive through organic vias
- 专利标题（中）： 通过有机通孔制造具有导电性的半导体器件的方法
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申请号： US12406038申请日： 2009-03-17
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公开(公告)号： US08258010B2公开(公告)日： 2012-09-04
- 发明人: Reza A. Pagaila , Byung Tai Do , Shuangwu Huang
- 申请人： Reza A. Pagaila , Byung Tai Do , Shuangwu Huang
- 申请人地址： SG Singapore
- 专利权人： STATS ChipPAC, Ltd.
- 当前专利权人： STATS ChipPAC, Ltd.
- 当前专利权人地址： SG Singapore
- 代理机构： Patent Law Group: Atkins & Associates, P.C.
- 代理商 Robert D. Atkins
- 主分类号： H01L21/50
- IPC分类号： H01L21/50
摘要：
A plurality of semiconductor die is mounted to a carrier separated by a peripheral region. An insulating material is deposited in the peripheral region. A first opening is formed in the insulating material of the peripheral region to a first depth. A second opening is formed in the insulating material of the peripheral region centered over the first opening to a second depth less than the first depth. The first and second openings constitute a composite through organic via (TOV) having a first width in a vertical region of the first opening and a second width in a vertical region of the second opening. The second width is different than the first width. A conductive material is deposited in the composite TOV to form a conductive TOV. An organic solderability preservative (OSP) coating is formed over a contact surface of the conductive TOV.
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