公开(公告)号：US20120280402A1

公开(公告)日：2012-11-08

申请号：US13553711

申请日：2012-07-19

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang

IPC分类号： H01L21/768 ,  H01L23/48

CPC分类号： H01L21/486 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/48 ,  H01L24/82 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/82001 ,  H01L2224/82039 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A plurality of semiconductor die is mounted to a carrier separated by a peripheral region. An insulating material is deposited in the peripheral region. A first opening is formed in the insulating material of the peripheral region to a first depth. A second opening is formed in the insulating material of the peripheral region centered over the first opening to a second depth less than the first depth. The first and second openings constitute a composite through organic via (TOV) having a first width in a vertical region of the first opening and a second width in a vertical region of the second opening. The second width is different than the first width. A conductive material is deposited in the composite TOV to form a conductive TOV. An organic solderability preservative (OSP) coating is formed over a contact surface of the conductive TOV.

摘要翻译： 多个半导体管芯安装到由周边区域分离的载体上。 绝缘材料沉积在周边区域中。 在周边区域的绝缘材料中形成第一开口至第一深度。 第二开口形成在以第一开口为中心的周边区域的绝缘材料到小于第一深度的第二深度。 第一和第二开口构成通过在第一开口的垂直区域中具有第一宽度和在第二开口的垂直区域中的第二宽度的有机通孔（TOV）构成复合材料。 第二宽度与第一宽度不同。 导电材料沉积在复合TOV中以形成导电TOV。 在导电TOV的接触表面上形成有机可焊性防腐剂（OSP）涂层。

公开(公告)号：US20100237495A1

公开(公告)日：2010-09-23

申请号：US12406049

申请日：2009-03-17

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang

IPC分类号： H01L23/48 ,  H01L21/50 ,  H01L21/60

CPC分类号： H01L24/18 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/97 ,  H01L25/105 ,  H01L25/16 ,  H01L2221/68345 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1902 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device is made by providing a sacrificial substrate and depositing an adhesive layer over the sacrificial substrate. A first conductive layer is formed over the adhesive layer. A polymer pillar is formed over the first conductive layer. A second conductive layer is formed over the polymer pillar to create a conductive pillar with inner polymer core. A semiconductor die or component is mounted over the substrate. An encapsulant is deposited over the semiconductor die or component and around the conductive pillar. A first interconnect structure is formed over a first side of the encapsulant. The first interconnect structure is electrically connected to the conductive pillar. The sacrificial substrate and adhesive layers are removed. A second interconnect structure is formed over a second side of the encapsulant opposite the first interconnect structure. The second interconnect structure is electrically connected to the conductive pillar.

摘要翻译： 通过提供牺牲衬底并在牺牲衬底上沉积粘合剂层来制造半导体器件。 在粘合剂层上形成第一导电层。 聚合物柱形成在第一导电层上。 在聚合物柱上方形成第二导电层以产生具有内聚合物芯的导电柱。 半导体管芯或部件安装在衬底上。 密封剂沉积在半导体管芯或部件上并且围绕导电柱。 第一互连结构形成在密封剂的第一侧上。 第一互连结构电连接到导电柱。 去除牺牲基底和粘合剂层。 在与第一互连结构相对的密封剂的第二侧上形成第二互连结构。 第二互连结构电连接至导电柱。

公开(公告)号：US20100237471A1

公开(公告)日：2010-09-23

申请号：US12406038

申请日：2009-03-17

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang

IPC分类号： H01L23/538 ,  H01L21/50 ,  H01L21/3205

CPC分类号： H01L21/486 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/48 ,  H01L24/82 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/82001 ,  H01L2224/82039 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A plurality of semiconductor die is mounted to a carrier separated by a peripheral region. An insulating material is deposited in the peripheral region. A first opening is formed in the insulating material of the peripheral region to a first depth. A second opening is formed in the insulating material of the peripheral region centered over the first opening to a second depth less than the first depth. The first and second openings constitute a composite through organic via (TOV) having a first width in a vertical region of the first opening and a second width in a vertical region of the second opening. The second width is different than the first width. A conductive material is deposited in the composite TOV to form a conductive TOV. An organic solderability preservative (OSP) coating is formed over a contact surface of the conductive TOV.

摘要翻译： 多个半导体管芯安装到由周边区域分离的载体上。 绝缘材料沉积在周边区域中。 在周边区域的绝缘材料中形成第一开口至第一深度。 第二开口形成在以第一开口为中心的周边区域的绝缘材料到小于第一深度的第二深度。 第一和第二开口构成通过在第一开口的垂直区域中具有第一宽度和在第二开口的垂直区域中的第二宽度的有机通孔（TOV）构成复合材料。 第二宽度与第一宽度不同。 导电材料沉积在复合TOV中以形成导电TOV。 在导电TOV的接触表面上形成有机可焊性防腐剂（OSP）涂层。

公开(公告)号：US09236352B2

公开(公告)日：2016-01-12

申请号：US13334556

申请日：2011-12-22

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang ,  Nathapong Suthiwongsunthorn ,  Dioscoro Merilo

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang ,  Nathapong Suthiwongsunthorn ,  Dioscoro Merilo

IPC分类号： H01L23/552 ,  H01L21/56 ,  H01L21/683 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538 ,  H01L23/66 ,  H01L25/065 ,  H01L25/00 ,  H01L23/00

CPC分类号： H01L23/552 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/49805 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/66 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/48 ,  H01L24/96 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68336 ,  H01L2224/02122 ,  H01L2224/02311 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/02375 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05009 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/08145 ,  H01L2224/48 ,  H01L2224/96 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor wafer has a plurality of semiconductor die. A peripheral region is formed around the die. An insulating material is formed in the peripheral region. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. A conductive layer is formed between the conductive THV and contact pads of the semiconductor die. A noise absorbing material is deposited in the peripheral region between the conductive THV to isolate the semiconductor die from intra-device interference. The noise absorbing material extends through the peripheral region from a first side of the semiconductor die to a second side of the semiconductor die. The noise absorbing material has an angular, semi-circular, or rectangular shape. The noise absorbing material can be dispersed in the peripheral region between the conductive THV.

摘要翻译： 半导体晶片具有多个半导体管芯。 围绕模具形成周边区域。 在周边区域形成绝缘材料。 绝缘材料的一部分被去除以形成通孔（THV）。 导电材料沉积在THV中以形成导电THV。 在导电THV和半导体管芯的接触焊盘之间形成导电层。 噪声吸收材料沉积在导电THV之间的周边区域中，以将半导体管芯与器件间干扰隔离。 噪声吸收材料从半导体管芯的第一侧延伸穿过周边区域到半导体管芯的第二侧。 噪声吸收材料具有角度，半圆形或矩形形状。 噪声吸收材料可以分散在导电THV之间的周边区域。

公开(公告)号：US20120280403A1

公开(公告)日：2012-11-08

申请号：US13553739

申请日：2012-07-19

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang

IPC分类号： H01L23/48 ,  H01L25/07

CPC分类号： H01L21/486 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/48 ,  H01L24/82 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/82001 ,  H01L2224/82039 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A plurality of semiconductor die is mounted to a carrier separated by a peripheral region. An insulating material is deposited in the peripheral region. A first opening is formed in the insulating material of the peripheral region to a first depth. A second opening is formed in the insulating material of the peripheral region centered over the first opening to a second depth less than the first depth. The first and second openings constitute a composite through organic via (TOV) having a first width in a vertical region of the first opening and a second width in a vertical region of the second opening. The second width is different than the first width. A conductive material is deposited in the composite TOV to form a conductive TOV. An organic solderability preservative (OSP) coating is formed over a contact surface of the conductive TOV.

公开(公告)号：US20120153472A1

公开(公告)日：2012-06-21

申请号：US13405094

申请日：2012-02-24

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang

IPC分类号： H01L23/48

CPC分类号： H01L24/18 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/97 ,  H01L25/105 ,  H01L25/16 ,  H01L2221/68345 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1902 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device is made by providing a sacrificial substrate and depositing an adhesive layer over the sacrificial substrate. A first conductive layer is formed over the adhesive layer. A polymer pillar is formed over the first conductive layer. A second conductive layer is formed over the polymer pillar to create a conductive pillar with inner polymer core. A semiconductor die or component is mounted over the substrate. An encapsulant is deposited over the semiconductor die or component and around the conductive pillar. A first interconnect structure is formed over a first side of the encapsulant. The first interconnect structure is electrically connected to the conductive pillar. The sacrificial substrate and adhesive layers are removed. A second interconnect structure is formed over a second side of the encapsulant opposite the first interconnect structure. The second interconnect structure is electrically connected to the conductive pillar.

摘要翻译： 通过提供牺牲衬底并在牺牲衬底上沉积粘合剂层来制造半导体器件。 在粘合剂层上形成第一导电层。 聚合物柱形成在第一导电层上。 在聚合物柱上方形成第二导电层以产生具有内聚合物芯的导电柱。 半导体管芯或部件安装在衬底上。 密封剂沉积在半导体管芯或部件上并且围绕导电柱。 第一互连结构形成在密封剂的第一侧上。 第一互连结构电连接到导电柱。 去除牺牲基底和粘合剂层。 在与第一互连结构相对的密封剂的第二侧上形成第二互连结构。 第二互连结构电连接到导电柱。

公开(公告)号：US08742579B2

公开(公告)日：2014-06-03

申请号：US13405094

申请日：2012-02-24

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang

IPC分类号： H01L21/00

CPC分类号： H01L24/18 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/97 ,  H01L25/105 ,  H01L25/16 ,  H01L2221/68345 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/20 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1902 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device is made by providing a sacrificial substrate and depositing an adhesive layer over the sacrificial substrate. A first conductive layer is formed over the adhesive layer. A polymer pillar is formed over the first conductive layer. A second conductive layer is formed over the polymer pillar to create a conductive pillar with inner polymer core. A semiconductor die or component is mounted over the substrate. An encapsulant is deposited over the semiconductor die or component and around the conductive pillar. A first interconnect structure is formed over a first side of the encapsulant. The first interconnect structure is electrically connected to the conductive pillar. The sacrificial substrate and adhesive layers are removed. A second interconnect structure is formed over a second side of the encapsulant opposite the first interconnect structure. The second interconnect structure is electrically connected to the conductive pillar.

摘要翻译： 通过提供牺牲衬底并在牺牲衬底上沉积粘合剂层来制造半导体器件。 在粘合剂层上形成第一导电层。 聚合物柱形成在第一导电层上。 在聚合物柱上方形成第二导电层以产生具有内聚合物芯的导电柱。 半导体管芯或部件安装在衬底上。 密封剂沉积在半导体管芯或部件上并且围绕导电柱。 第一互连结构形成在密封剂的第一侧上。 第一互连结构电连接到导电柱。 去除牺牲基底和粘合剂层。 在与第一互连结构相对的密封剂的第二侧上形成第二互连结构。 第二互连结构电连接到导电柱。

公开(公告)号：US08093151B2

公开(公告)日：2012-01-10

申请号：US12404069

申请日：2009-03-13

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang ,  Nathapong Suthiwongsunthorn ,  Dioscoro Merilo

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang ,  Nathapong Suthiwongsunthorn ,  Dioscoro Merilo

IPC分类号： H01L21/44

CPC分类号： H01L23/552 ,  H01L21/565 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/49805 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/66 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/48 ,  H01L24/96 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68336 ,  H01L2224/02122 ,  H01L2224/02311 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/02375 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05009 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05554 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/08145 ,  H01L2224/48 ,  H01L2224/96 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/03 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor wafer has a plurality of semiconductor die. A peripheral region is formed around the die. An insulating material is formed in the peripheral region. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. A conductive layer is formed between the conductive THV and contact pads of the semiconductor die. A noise absorbing material is deposited in the peripheral region between the conductive THV to isolate the semiconductor die from intra-device interference. The noise absorbing material extends through the peripheral region from a first side of the semiconductor die to a second side of the semiconductor die. The noise absorbing material has an angular, semi-circular, or rectangular shape. The noise absorbing material can be dispersed in the peripheral region between the conductive THV.

摘要翻译： 半导体晶片具有多个半导体管芯。 围绕模具形成周边区域。 在周边区域形成绝缘材料。 绝缘材料的一部分被去除以形成通孔（THV）。 导电材料沉积在THV中以形成导电THV。 在导电THV和半导体管芯的接触焊盘之间形成导电层。 噪声吸收材料沉积在导电THV之间的周边区域中，以将半导体管芯与器件间干扰隔离。 噪声吸收材料从半导体管芯的第一侧延伸穿过周边区域到半导体管芯的第二侧。 噪声吸收材料具有角度，半圆形或矩形形状。 噪声吸收材料可以分散在导电THV之间的周边区域。

公开(公告)号：US09263361B2

公开(公告)日：2016-02-16

申请号：US13446863

申请日：2012-04-13

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang ,  Rajendra D. Pendse

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang ,  Rajendra D. Pendse

IPC分类号： H01L23/31 ,  H01L21/683 ,  H01L23/00 ,  H01L25/10 ,  H01L23/538

CPC分类号： H01L23/3128 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/48 ,  H01L24/73 ,  H01L24/86 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16 ,  H01L2224/20 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is made by forming a conductive layer over a temporary carrier. The conductive layer includes a wettable pad. A stud bump is formed over the wettable pad. The stud bump can be a stud bump or stacked bumps. A semiconductor die is mounted to the carrier. An encapsulant is deposited over the semiconductor die and around the stud bump. A first interconnect structure is formed over a first surface of the encapsulant. The first interconnect structure includes a first IPD and is electrically connected to the stud bump. The carrier is removed. A second interconnect structure is formed over a second surface of encapsulant opposite the first interconnect structure. The second interconnect structure includes a second IPD. The first or second IPD includes a capacitor, resistor, or inductor. The semiconductor devices are stackable and electrically connected through the stud bump.

摘要翻译： 通过在临时载体上形成导电层制成半导体器件。 导电层包括可湿性垫。 在可湿性垫上形成柱状凸块。 螺栓凸块可以是螺柱凸块或堆叠的凸块。 半导体管芯安装在载体上。 密封剂沉积在半导体管芯上并且在螺柱凸块周围。 在密封剂的第一表面上形成第一互连结构。 第一互连结构包括第一IPD并且电连接到螺柱凸块。 载体被移除。 在与第一互连结构相对的密封剂的第二表面上形成第二互连结构。 第二互连结构包括第二IPD。 第一或第二IPD包括电容器，电阻器或电感器。 半导体器件可叠置并通过柱形凸起电连接。

公开(公告)号：US08258010B2

公开(公告)日：2012-09-04

申请号：US12406038

申请日：2009-03-17

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Shuangwu Huang

IPC分类号： H01L21/50

CPC分类号： H01L21/486 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/48 ,  H01L24/82 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/05001 ,  H01L2224/05026 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/82001 ,  H01L2224/82039 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2224/82 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A plurality of semiconductor die is mounted to a carrier separated by a peripheral region. An insulating material is deposited in the peripheral region. A first opening is formed in the insulating material of the peripheral region to a first depth. A second opening is formed in the insulating material of the peripheral region centered over the first opening to a second depth less than the first depth. The first and second openings constitute a composite through organic via (TOV) having a first width in a vertical region of the first opening and a second width in a vertical region of the second opening. The second width is different than the first width. A conductive material is deposited in the composite TOV to form a conductive TOV. An organic solderability preservative (OSP) coating is formed over a contact surface of the conductive TOV.

摘要翻译： 多个半导体管芯安装到由周边区域分离的载体上。 绝缘材料沉积在周边区域中。 在周边区域的绝缘材料中形成第一开口至第一深度。 第二开口形成在以第一开口为中心的周边区域的绝缘材料到小于第一深度的第二深度。 第一和第二开口构成通过在第一开口的垂直区域中具有第一宽度和在第二开口的垂直区域中的第二宽度的有机通孔（TOV）构成复合材料。 第二宽度与第一宽度不同。 导电材料沉积在复合TOV中以形成导电TOV。 在导电TOV的接触表面上形成有机可焊性防腐剂（OSP）涂层。