发明授权
- 专利标题： Method of forming semiconductor die
- 专利标题（中）： 形成半导体管芯的方法
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申请号： US12832168申请日： 2010-07-08
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公开(公告)号： US08258055B2公开(公告)日： 2012-09-04
- 发明人: Chien Ling Hwang , Ying-Jui Huang , Zheng-Yi Lim , Yi-Yang Lei , Cheng-Chung Lin , Chung-Shi Liu
- 申请人： Chien Ling Hwang , Ying-Jui Huang , Zheng-Yi Lim , Yi-Yang Lei , Cheng-Chung Lin , Chung-Shi Liu
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman Ham & Berner, LLP
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
An embodiment of the disclosure includes a conductive bump on a semiconductor die. A substrate is provided. A bond pad is over the substrate. An under bump metallurgy (UBM) layer is over the bond pad. A copper pillar is over the UBM layer. The copper pillar has a top surface with a first width and sidewalls with a concave shape. A nickel layer having a top surface and a bottom surface is over the top surface of the copper pillar. The bottom surface of the nickel layer has a second width. A ratio of the second width to the first width is between about 0.93 to about 1.07. A solder material is over the top surface of the cap layer.
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