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公开(公告)号：US20120007230A1
公开(公告)日：2012-01-12
申请号：US12832168
申请日：2010-07-08
申请人： Chien Ling Hwang , Ying-Jui Huang , Zheng-Yi Lim , Yi-Yang Lei , Cheng-Chung Lin , Chung-Shi Liu
发明人： Chien Ling Hwang , Ying-Jui Huang , Zheng-Yi Lim , Yi-Yang Lei , Cheng-Chung Lin , Chung-Shi Liu
IPC分类号： H01L23/498 , H01L21/3205
CPC分类号： H01L24/13 , H01L21/563 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/16 , H01L24/73 , H01L24/81 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/03464 , H01L2224/0361 , H01L2224/03831 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05572 , H01L2224/05647 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11622 , H01L2224/11831 , H01L2224/11849 , H01L2224/11901 , H01L2224/13007 , H01L2224/13017 , H01L2224/13022 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/131 , H01L2224/13147 , H01L2224/13155 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/73204 , H01L2224/81801 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01072 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/3512 , H01L2224/05552 , H01L2924/00 , H01L2224/1146
摘要： An embodiment of the disclosure includes a conductive bump on a semiconductor die. A substrate is provided. A bond pad is over the substrate. An under bump metallurgy (UBM) layer is over the bond pad. A copper pillar is over the UBM layer. The copper pillar has a top surface with a first width and sidewalls with a concave shape. A nickel layer having a top surface and a bottom surface is over the top surface of the copper pillar. The bottom surface of the nickel layer has a second width. A ratio of the second width to the first width is between about 0.93 to about 1.07. A solder material is over the top surface of the cap layer.
摘要翻译： 本公开的实施例包括半导体管芯上的导电凸块。 提供基板。 焊盘在衬底上。 凸块下金属（UBM）层位于焊盘上方。 铜柱在UBM层之上。 铜柱具有第一宽度的顶表面和具有凹形的侧壁。 具有顶表面和底表面的镍层在铜柱的顶表面之上。 镍层的底面具有第二宽度。 第二宽度与第一宽度的比率在约0.93至约1.07之间。 焊料材料在盖层的顶表面之上。
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公开(公告)号：US08258055B2
公开(公告)日：2012-09-04
申请号：US12832168
申请日：2010-07-08
申请人： Chien Ling Hwang , Ying-Jui Huang , Zheng-Yi Lim , Yi-Yang Lei , Cheng-Chung Lin , Chung-Shi Liu
发明人： Chien Ling Hwang , Ying-Jui Huang , Zheng-Yi Lim , Yi-Yang Lei , Cheng-Chung Lin , Chung-Shi Liu
IPC分类号： H01L21/44
CPC分类号： H01L24/13 , H01L21/563 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/16 , H01L24/73 , H01L24/81 , H01L2224/0345 , H01L2224/03452 , H01L2224/0346 , H01L2224/03464 , H01L2224/0361 , H01L2224/03831 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05572 , H01L2224/05647 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11622 , H01L2224/11831 , H01L2224/11849 , H01L2224/11901 , H01L2224/13007 , H01L2224/13017 , H01L2224/13022 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/131 , H01L2224/13147 , H01L2224/13155 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/73204 , H01L2224/81801 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01072 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/3512 , H01L2224/05552 , H01L2924/00 , H01L2224/1146
摘要： An embodiment of the disclosure includes a conductive bump on a semiconductor die. A substrate is provided. A bond pad is over the substrate. An under bump metallurgy (UBM) layer is over the bond pad. A copper pillar is over the UBM layer. The copper pillar has a top surface with a first width and sidewalls with a concave shape. A nickel layer having a top surface and a bottom surface is over the top surface of the copper pillar. The bottom surface of the nickel layer has a second width. A ratio of the second width to the first width is between about 0.93 to about 1.07. A solder material is over the top surface of the cap layer.
摘要翻译： 本公开的实施例包括半导体管芯上的导电凸块。 提供基板。 焊盘在衬底上。 凸块下金属（UBM）层位于焊盘上方。 铜柱在UBM层之上。 铜柱具有第一宽度的顶表面和具有凹形的侧壁。 具有顶表面和底表面的镍层在铜柱的顶表面之上。 镍层的底面具有第二宽度。 第二宽度与第一宽度的比率在约0.93至约1.07之间。 焊料材料在盖层的顶表面之上。
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公开(公告)号：US08389397B2
公开(公告)日：2013-03-05
申请号：US12881495
申请日：2010-09-14
申请人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu
发明人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu
IPC分类号： H01L21/44
CPC分类号： H01L21/67028 , H01L23/3114 , H01L23/3157 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0345 , H01L2224/0361 , H01L2224/03831 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05166 , H01L2224/05181 , H01L2224/05572 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11622 , H01L2224/1308 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/00 , H01L2224/05552
摘要： A method of forming a device includes providing a wafer including a substrate; and forming an under-bump metallurgy (UBM) layer including a barrier layer overlying the substrate and a seed layer overlying the barrier layer. A metal bump is formed directly over a first portion of the UBM layer, wherein a second portion of the UBM layer is not covered by the metal bump. The second portion of the UBM layer includes a seed layer portion and a barrier layer portion. A first etch is performed to remove the seed layer portion, followed by a first rinse step performed on the wafer. A second etch is performed to remove the barrier layer portion, followed by a second rinse step performed on the wafer. At least a first switch time from the first etch to the first rinse step and a second switch time from the second etch to the second rinse step is less than about 1 second.
摘要翻译： 一种形成器件的方法包括提供包括衬底的晶片; 以及形成包括覆盖在衬底上的阻挡层和覆盖在阻挡层上的种子层的凸起下金属（UBM）层。 直接在UBM层的第一部分上形成金属凸块，其中UBM层的第二部分不被金属凸块覆盖。 UBM层的第二部分包括种子层部分和阻挡层部分。 进行第一蚀刻以除去种子层部分，接着在晶片上执行第一漂洗步骤。 执行第二蚀刻以去除阻挡层部分，接着在晶片上执行第二冲洗步骤。 从第一蚀刻到第一漂洗步骤的至少第一切换时间和从第二蚀刻到第二冲洗步骤的第二切换时间小于约1秒。
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公开(公告)号：US08501613B2
公开(公告)日：2013-08-06
申请号：US13178276
申请日：2011-07-07
申请人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu
发明人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu
IPC分类号： H01L21/44
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0345 , H01L2224/036 , H01L2224/03632 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05564 , H01L2224/05572 , H01L2224/05647 , H01L2224/11424 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/13007 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2924/00014 , H01L2924/01029 , H01L2924/12042 , H01L2924/04941 , H01L2924/04953 , H01L2924/014 , H01L2924/01047 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： A method includes forming an under-bump metallurgy (UBM) layer overlying a substrate, and forming a mask overlying the UBM layer. The mask covers a first portion of the UBM layer, and a second portion of the UBM layer is exposed through an opening in the mask. A metal bump is formed in the opening and on the second portion of the UBM layer. The mask is then removed. A laser removal is performed to remove a part of the first portion of the UBM layer and to form an UBM.
摘要翻译： 一种方法包括形成覆盖衬底的凸起下金属（UBM）层，以及形成覆盖UBM层的掩模。 掩模覆盖UBM层的第一部分，并且UBM层的第二部分通过掩模中的开口暴露。 在UBM层的开口和第二部分上形成金属凸块。 然后取下面具。 执行激光去除以去除UBM层的第一部分的一部分并形成UBM。
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公开(公告)号：US20130012014A1
公开(公告)日：2013-01-10
申请号：US13178276
申请日：2011-07-07
申请人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu
发明人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu
IPC分类号： H01L21/28
CPC分类号： H01L24/11 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/0345 , H01L2224/036 , H01L2224/03632 , H01L2224/0401 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/05124 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05181 , H01L2224/05186 , H01L2224/05564 , H01L2224/05572 , H01L2224/05647 , H01L2224/11424 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/13007 , H01L2224/13082 , H01L2224/13083 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2924/00014 , H01L2924/01029 , H01L2924/12042 , H01L2924/04941 , H01L2924/04953 , H01L2924/014 , H01L2924/01047 , H01L2924/00012 , H01L2224/05552 , H01L2924/00
摘要： A method includes forming an under-bump metallurgy (UBM) layer overlying a substrate, and forming a mask overlying the UBM layer. The mask covers a first portion of the UBM layer, and a second portion of the UBM layer is exposed through an opening in the mask. A metal bump is formed in the opening and on the second portion of the UBM layer. The mask is then removed. A laser removal is performed to remove a part of the first portion of the UBM layer and to form an UBM.
摘要翻译： 一种方法包括形成覆盖衬底的凸起下金属（UBM）层，以及形成覆盖UBM层的掩模。 掩模覆盖UBM层的第一部分，并且UBM层的第二部分通过掩模中的开口暴露。 在UBM层的开口和第二部分上形成金属凸块。 然后取下面具。 执行激光去除以去除UBM层的第一部分的一部分并形成UBM。
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公开(公告)号：US08748306B2
公开(公告)日：2014-06-10
申请号：US13198767
申请日：2011-08-05
申请人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu
发明人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu , Mirng-Ji Lii , Chen-Hua Yu
CPC分类号： H01L24/11 , H01L23/3171 , H01L23/3192 , H01L24/02 , H01L24/05 , H01L24/13 , H01L2224/0239 , H01L2224/0401 , H01L2224/05024 , H01L2224/05569 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05681 , H01L2224/05687 , H01L2224/11334 , H01L2224/11849 , H01L2224/119 , H01L2224/1191 , H01L2224/131 , H01L2224/13111 , H01L2924/00014 , H01L2924/10253 , H01L2924/12042 , H01L2924/181 , H01L2924/01029 , H01L2924/01013 , H01L2924/01028 , H01L2924/014 , H01L2924/01047 , H01L2224/1181 , H01L2924/04953 , H01L2924/04941 , H01L2924/00 , H01L2224/05552
摘要： A method of forming wafer-level chip scale packaging solder bumps on a wafer substrate involves cleaning the surface of the solder bumps using a laser to remove any residual molding compound from the surface of the solder bumps after the solder bumps are reflowed and a liquid molding compound is applied and cured.
摘要翻译： 在晶片衬底上形成晶片级芯片级封装焊料凸块的方法包括使用激光清洗焊料凸块的表面，以在焊料凸点回流之后从焊料凸块的表面去除残留的模塑料，并且液态模塑 化合物被施用和固化。
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公开(公告)号：US20120064712A1
公开(公告)日：2012-03-15
申请号：US12881495
申请日：2010-09-14
申请人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu
发明人： Yi-Yang Lei , Hung-Jui Kuo , Chung-Shi Liu
IPC分类号： H01L21/768
CPC分类号： H01L21/67028 , H01L23/3114 , H01L23/3157 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/0345 , H01L2224/0361 , H01L2224/03831 , H01L2224/03912 , H01L2224/0401 , H01L2224/05027 , H01L2224/05166 , H01L2224/05181 , H01L2224/05572 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/1146 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11622 , H01L2224/1308 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/00 , H01L2224/05552
摘要： A method of forming a device includes providing a wafer including a substrate; and forming an under-bump metallurgy (UBM) layer including a barrier layer overlying the substrate and a seed layer overlying the barrier layer. A metal bump is formed directly over a first portion of the UBM layer, wherein a second portion of the UBM layer is not covered by the metal bump. The second portion of the UBM layer includes a seed layer portion and a barrier layer portion. A first etch is performed to remove the seed layer portion, followed by a first rinse step performed on the wafer. A second etch is performed to remove the barrier layer portion, followed by a second rinse step performed on the wafer. At least a first switch time from the first etch to the first rinse step and a second switch time from the second etch to the second rinse step is less than about 1 second.
摘要翻译： 一种形成器件的方法包括提供包括衬底的晶片; 以及形成包括覆盖在衬底上的阻挡层和覆盖在阻挡层上的种子层的凸起下金属（UBM）层。 直接在UBM层的第一部分上形成金属凸块，其中UBM层的第二部分不被金属凸块覆盖。 UBM层的第二部分包括种子层部分和阻挡层部分。 进行第一蚀刻以除去种子层部分，接着在晶片上执行第一漂洗步骤。 执行第二蚀刻以去除阻挡层部分，接着在晶片上执行第二冲洗步骤。 从第一蚀刻到第一漂洗步骤的至少第一切换时间和从第二蚀刻到第二冲洗步骤的第二切换时间小于约1秒。
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