Invention Grant
US08258064B2 Methods of forming a metal silicate layer and methods of fabricating a semiconductor device including the metal silicate layer
有权
形成金属硅酸盐层的方法和制造包括金属硅酸盐层的半导体器件的方法
- Patent Title: Methods of forming a metal silicate layer and methods of fabricating a semiconductor device including the metal silicate layer
- Patent Title (中): 形成金属硅酸盐层的方法和制造包括金属硅酸盐层的半导体器件的方法
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Application No.: US12909947Application Date: 2010-10-22
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Publication No.: US08258064B2Publication Date: 2012-09-04
- Inventor: Jong-cheol Lee , Ki-yeon Park , Se-hoon Oh , Youn-soo Kim
- Applicant: Jong-cheol Lee , Ki-yeon Park , Se-hoon Oh , Youn-soo Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2009-0103565 20091029
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/283
Abstract:
Methods of forming a metal silicate layer and methods of fabricating a semiconductor device including the metal silicate layer are provided, the methods of forming the metal silicate layer include forming the metal silicate using a plurality of silicon precursors. The silicon precursors are homoleptic silicon precursors in which ligands bound to silicon have the same molecular structure.
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