发明授权
- 专利标题： Non-volatile anti-fuse with consistent rupture
- 专利标题（中）： 不挥发性反熔丝具有一致的破裂
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申请号： US13045725申请日： 2011-03-11
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公开(公告)号： US08258586B1公开(公告)日： 2012-09-04
- 发明人: Allan T. Mitchell , Mark A. Eskew , Keith Jarreau
- 申请人： Allan T. Mitchell , Mark A. Eskew , Keith Jarreau
- 申请人地址： US TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： US TX Dallas
- 代理商 John R. Pessetto; W. James Brady; Frederick J. Telecky, Jr.
- 主分类号： H01L27/115
- IPC分类号： H01L27/115
摘要：
In an embodiment of the invention, a non-volatile anti-fuse memory cell is disclosed. The memory cell consists of a programmable n-channel diode-connectable transistor. The poly-silicon gate of the transistor has two portions. One portion is doped more highly than a second portion. The transistor also has a source with two portions where one portion of the source is doped more highly than a second portion. The portion of the gate that is physically closer to the source is more lightly doped than the other portion of the poly-silicon gate. The portion of the source that is physically closer to the lightly doped portion of the poly-silicone gate is lightly doped with respect to the other portion of the source. When the transistor is programmed, a rupture in the insulator will most likely occur in the portion of the poly-silicone gate that is heavily doped.
公开/授权文献
- US20120228724A1 Non-Volatile Anti-Fuse With Consistent Rupture 公开/授权日：2012-09-13
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