发明授权
- 专利标题： Stacked photoelectric conversion device and method for producing the same
- 专利标题（中）： 叠层光电转换装置及其制造方法
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申请号： US12523633申请日： 2007-11-15
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公开(公告)号： US08258596B2公开(公告)日： 2012-09-04
- 发明人: Yoshiyuki Nasuno , Noriyoshi Kohama , Takanori Nakano
- 申请人： Yoshiyuki Nasuno , Noriyoshi Kohama , Takanori Nakano
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Nixon & Vanderhye P.C.
- 优先权： JP2007-012851 20070123
- 国际申请： PCT/JP2007/072207 WO 20071115
- 国际公布： WO2008/090666 WO 20080731
- 主分类号： H01L31/103
- IPC分类号： H01L31/103 ; H01L21/329
摘要：
To provide a stacked photoelectric conversion device and a method for producing the same, in which an interlayer is provided between photoelectric conversion layers to obtain an effect of controlling the amount of incidence light, and carrier recombination at an interface between the interlayer and a semiconductor layer is decreased to enhance photoelectric conversion efficiency.The stacked photoelectric conversion device of the present invention comprises a plurality of silicon-based photoelectric conversion layers having a p-i-n structure stacked, wherein at least a pair of adjacent photoelectric conversion layers have an interlayer of a silicon nitride therebetween, the pair of the photoelectric conversion layers are electrically connected with each other, and a p-type silicon-based semiconductor layer constituting a part of the photoelectric conversion layer and contacting the interlayer contains a nitrogen atom.
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