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公开(公告)号：US08258596B2
公开(公告)日：2012-09-04
申请号：US12523633
申请日：2007-11-15
IPC分类号： H01L31/103 , H01L21/329
CPC分类号： H01L31/0236 , H01L31/022425 , H01L31/02366 , H01L31/076 , Y02E10/548
摘要： To provide a stacked photoelectric conversion device and a method for producing the same, in which an interlayer is provided between photoelectric conversion layers to obtain an effect of controlling the amount of incidence light, and carrier recombination at an interface between the interlayer and a semiconductor layer is decreased to enhance photoelectric conversion efficiency.The stacked photoelectric conversion device of the present invention comprises a plurality of silicon-based photoelectric conversion layers having a p-i-n structure stacked, wherein at least a pair of adjacent photoelectric conversion layers have an interlayer of a silicon nitride therebetween, the pair of the photoelectric conversion layers are electrically connected with each other, and a p-type silicon-based semiconductor layer constituting a part of the photoelectric conversion layer and contacting the interlayer contains a nitrogen atom.
摘要翻译： 为了提供层叠光电转换装置及其制造方法，其中在光电转换层之间设置中间层以获得控制入射光的效果，以及在中间层和半导体层之间的界面处的载流子复合 降低增强光电转换效率。 本发明的层叠型光电转换元件具有层叠有pin结构的多个硅系光电转换层，其中至少一对相邻的光电转换层之间具有氮化硅中间层，该一对光电转换 层彼此电连接，并且构成光电转换层的一部分并与中间层接触的p型硅基半导体层包含氮原子。
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2.发明申请公开(公告)号：US20100059847A1
公开(公告)日：2010-03-11
申请号：US12523633
申请日：2007-11-15
IPC分类号： H01L31/103 , H01L21/329
CPC分类号： H01L31/0236 , H01L31/022425 , H01L31/02366 , H01L31/076 , Y02E10/548
摘要： To provide a stacked photoelectric conversion device and a method for producing the same, in which an interlayer is provided between photoelectric conversion layers to obtain an effect of controlling the amount of incidence light, and carrier recombination at an interface between the interlayer and a semiconductor layer is decreased to enhance photoelectric conversion efficiency.The stacked photoelectric conversion device of the present invention comprises a plurality of silicon-based photoelectric conversion layers having a p-i-n structure stacked, wherein at least a pair of adjacent photoelectric conversion layers have an interlayer of a silicon nitride therebetween, the pair of the photoelectric conversion layers are electrically connected with each other, and a p-type silicon-based semiconductor layer constituting a part of the photoelectric conversion layer and contacting the interlayer contains a nitrogen atom.
摘要翻译： 为了提供层叠光电转换装置及其制造方法，其中在光电转换层之间设置中间层以获得控制入射光的效果，以及在中间层和半导体层之间的界面处的载流子复合 降低增强光电转换效率。 本发明的层叠型光电转换元件具有层叠有pin结构的多个硅系光电转换层，其中至少一对相邻的光电转换层之间具有氮化硅中间层，该一对光电转换 层彼此电连接，并且构成光电转换层的一部分并与中间层接触的p型硅基半导体层包含氮原子。
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3.发明授权Iron sulfide semiconductor doped with Mg or Zn, junction devices and photoelectric converter comprising same 有权掺杂有Mg或Zn的铁硫化物半导体，结器件和包含它们的光电转换器公开(公告)号：US08093684B2
公开(公告)日：2012-01-10
申请号：US11651086
申请日：2007-01-09
IPC分类号： H01L29/24 , H01L29/36 , H01L31/032 , H01L31/036
CPC分类号： H01L31/068 , H01L31/0321 , Y02E10/547
摘要： The semiconductor of the present invention has iron sulfide and a forbidden band control element contained in the iron sulfide. The forbidden band control element has a property capable of controlling the forbidden band of iron sulfide on the basis of the number density of the forbidden band control element in the iron sulfide. An n-type semiconductor is manufactured by incorporating a group 13 element of the IUPAC system into iron sulfide. Moreover, a p-type semiconductor is manufactured by incorporating a group Ia element into iron sulfide. A semiconductor junction device or a photoelectric converter is manufactured by using the n-type semiconductor and the p-type semiconductor.
摘要翻译： 本发明的半导体具有硫化铁和包含在硫化铁中的禁带控制元件。 禁带控制元件具有能够基于硫化铁中的禁带控制元件的数量密度来控制硫化铁的禁带的性质。 通过将IUPAC系统的第13族元素并入硫化铁中制造n型半导体。 此外，通过将Ia族元素并入硫化铁中来制造p型半导体。 通过使用n型半导体和p型半导体制造半导体接合器件或光电转换器。
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4.发明申请公开(公告)号：US20070151596A1
公开(公告)日：2007-07-05
申请号：US10587541
申请日：2005-01-07
IPC分类号： H01L31/00
CPC分类号： H01L31/0236 , H01L31/022466 , H01L31/022483 , H01L31/02363 , H01L31/02366 , H01L31/076 , H01L31/1884 , Y02E10/548
摘要： A substrate 1 for a photoelectric conversion device includes a first transparent conductive layer 5 formed on at least a part of the surface region of a transparent substrate 3, the first transparent conductive layer 5 having at least an opening portion 7 exposing the substrate 3.
摘要翻译： 用于光电转换装置的基板1包括形成在透明基板3的表面区域的至少一部分上的第一透明导电层5，第一透明导电层5至少具有暴露基板3的开口部分7。
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5.发明授权公开(公告)号：US08957300B2
公开(公告)日：2015-02-17
申请号：US10587541
申请日：2005-01-07
IPC分类号： H01L25/00 , H01L31/0236 , H01L31/0224 , H01L31/076 , H01L31/18
CPC分类号： H01L31/0236 , H01L31/022466 , H01L31/022483 , H01L31/02363 , H01L31/02366 , H01L31/076 , H01L31/1884 , Y02E10/548
摘要： A substrate 1 for a photoelectric conversion device includes a first transparent conductive layer 5 formed on at least a part of the surface region of a transparent substrate 3, the first transparent conductive layer 5 having at least an opening portion 7 exposing the substrate 3.
摘要翻译： 用于光电转换装置的基板1包括形成在透明基板3的表面区域的至少一部分上的第一透明导电层5，第一透明导电层5至少具有暴露基板3的开口部分7。
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6.发明申请Semiconductor, n-type semiconductor, p-type semiconductor, semiconductor junction device, pn junction device and photoelectric converter 有权半导体，n型半导体，p型半导体，半导体结器件，pn结器件和光电转换器公开(公告)号：US20070163635A1
公开(公告)日：2007-07-19
申请号：US11651086
申请日：2007-01-09
CPC分类号： H01L31/068 , H01L31/0321 , Y02E10/547
摘要： The semiconductor of the present invention has iron sulfide and a forbidden band control element contained in the iron sulfide. The forbidden band control element has a property capable of controlling the forbidden band of iron sulfide on the basis of the number density of the forbidden band control element in the iron sulfide. An n-type semiconductor is manufactured by incorporating a group IIIb element into iron sulfide. Moreover, a p-type semiconductor is manufactured by incorporating a group Ia element into iron sulfide. A semiconductor junction device or a photoelectric converter is manufactured by using the n-type semiconductor and the p-type semiconductor.
摘要翻译： 本发明的半导体具有硫化铁和包含在硫化铁中的禁带控制元件。 禁带控制元件具有能够基于硫化铁中的禁带控制元件的数量密度来控制硫化铁的禁带的性质。 通过将IIIb族元素并入硫化铁中制造n型半导体。 此外，通过将Ia族元素并入硫化铁中来制造p型半导体。 通过使用n型半导体和p型半导体制造半导体接合器件或光电转换器。
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公开(公告)号：US20120280242A1
公开(公告)日：2012-11-08
申请号：US13519984
申请日：2010-12-28
IPC分类号： H01L31/036 , H01L29/04
CPC分类号： H01L21/0262 , H01L21/02422 , H01L21/02491 , H01L21/02532 , H01L21/02667 , H01L31/03685 , H01L31/0392 , H01L31/03921 , Y02E10/545 , Y02E10/548
摘要： There is provided a semiconductor film formed on a surface of a substrate and containing a crystalline substance, wherein the semiconductor film has a central region including a center of a surface of the semiconductor film and a peripheral region located around the central region, and a crystallization ratio in the peripheral region of the semiconductor film is higher than a crystallization ratio in the central region. There is also provided a photoelectric conversion device including the semiconductor film.
摘要翻译： 提供了形成在基板的表面上并含有结晶物质的半导体膜，其中半导体膜具有包括半导体膜的表面的中心和位于中心区周围的周边区域的中心区域， 半导体膜的外围区域的比例高于中心区域的结晶化率。 还提供了包括半导体膜的光电转换装置。
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公开(公告)号：US20110265845A1
公开(公告)日：2011-11-03
申请号：US13143811
申请日：2010-01-04
申请人： Yoshiyuki Nasuno , Takanori Nakano , Akira Shimizu
发明人： Yoshiyuki Nasuno , Takanori Nakano , Akira Shimizu
IPC分类号： H01L31/05 , H01L31/042
CPC分类号： H01L31/1804 , H01L31/02 , H01L31/0201 , H01L31/044 , H01L31/046 , H01L31/0463 , Y02E10/547 , Y02P70/521
摘要： The thin-film solar cell module according to the present invention has: a substrate; and a cell module having three or more cell strings, each of which has a constant width, wherein each cell string has a plurality of solar cells having the same width as the cell string and connected in series, the cell strings have the same length as the solar cells connected in series and are provided on the substrate in parallel connection so as to be aligned, the solar cells respectively have a front surface electrode, a photoelectric conversion layer and a rear surface electrode layered in this order, each cell string has contact lines electrically connecting the front surface electrode of a first solar cell to the rear surface electrode of a second solar cell, and the cell strings at both ends in the three or more cell strings have a width narrower than the other cell string.
摘要翻译： 根据本发明的薄膜太阳能电池模块具有：基板; 以及具有三个以上的单元串的单元模块，每个单元串均具有恒定的宽度，其中每个单元串具有多个具有与单元串相同宽度的太阳能电池并串联连接，单元串的长度与 太阳能电池串联连接并且设置在基板上并联连接以对准，太阳能电池分别具有依次层叠的前表面电极，光电转换层和背面电极，每个电池串具有接触 将第一太阳能电池的前表面电极电连接到第二太阳能电池的背面电极的线，并且三个或更多个电池串中的两端的电池串的宽度比其他电池串窄。
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公开(公告)号：US20130081685A1
公开(公告)日：2013-04-04
申请号：US13700237
申请日：2011-02-17
IPC分类号： H01L31/076
CPC分类号： H01L31/076 , H01L21/02532 , H01L21/02576 , H01L31/03529 , H01L31/03767 , H01L31/03921 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A photoelectric conversion device including a substrate and a pin type photoelectric conversion layer disposed on the surface of the substrate is provided. The pin type photoelectric conversion layer includes a first pin type photoelectric conversion layer formed by stacking a p type semiconductor layer, an i type semiconductor layer serving as an amorphous semiconductor layer and an n type semiconductor layer. The first pin type photoelectric conversion layer includes the first portion located on a part of the surface of the substrate and the second portion located on another part of the surface of the substrate. The first portion is higher in concentration of at least one impurity element selected from oxygen, nitrogen and carbon than the second portion. The first portion is less in thickness than the second portion.
摘要翻译： 提供一种光电转换装置，其包括设置在基板表面上的基板和pin型光电转换层。 针式光电转换层包括通过堆叠p型半导体层，用作非晶半导体层的i型半导体层和n型半导体层形成的第一引脚型光电转换层。 第一pin型光电转换层包括位于基板表面的一部分上的第一部分和位于基板表面的另一部分上的第二部分。 与第二部分相比，第一部分的浓度高于选自氧，氮和碳的至少一种杂质元素。 第一部分的厚度小于第二部分。
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公开(公告)号：US20110265846A1
公开(公告)日：2011-11-03
申请号：US13144051
申请日：2010-01-04
申请人： Yoshiyuki Nasuno , Takanori Nakano , Akira Shimizu
发明人： Yoshiyuki Nasuno , Takanori Nakano , Akira Shimizu
IPC分类号： H01L31/05 , H01L31/042
CPC分类号： H01L31/042 , H01L31/0201 , H01L31/0463 , H01L31/075 , H01L31/077 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： The thin-film solar cell module according to the present invention has a substrate and a cell module that includes three or more cell strings, each of which has a constant width, and is characterized in that each cell string has a plurality of solar cells which are connected in series, the cell strings are provided on the substrate so as to be aligned in a direction perpendicular to a direction in which the solar cells are connected in series and connected to each other in parallel, the solar cells each have a front surface electrode, a photoelectric conversion layer and a rear surface electrode stacked in this order, the cell strings have contact lines which electrically connect the front surface electrode of one of neighboring solar cells of the solar cells and the rear surface electrode of the other, the solar cells being included in the cell string, and have the same width as the cell string, and at least one of the cell strings at the two ends of the above described three or more cell strings has a width greater than the other cell strings.
摘要翻译： 根据本发明的薄膜太阳能电池模块具有包括三个或更多个具有恒定宽度的单元串的基板和单元模块，其特征在于每个单元串具有多个太阳能电池， 电池串被设置在基板上，以便在与太阳能电池串联连接的方向垂直的方向上对准，并联连接，太阳能电池各自具有前表面 电极，光电转换层和背面电极，电池串具有将太阳能电池的一个相邻的太阳能电池的前表面电极与另一个的背面电极电连接的接触线，太阳能电池 细胞被包含在细胞串中，并且具有与细胞串相同的宽度，并且上述三个或更多个的两端的细胞串中的至少一个 单元格字符串的宽度大于其他单元格字符串。
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