发明授权
- 专利标题： Flash memory system operating in a random access mode
- 专利标题（中）： 闪存系统以随机存取模式运行
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申请号： US13006068申请日： 2011-01-13
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公开(公告)号： US08259501B2公开(公告)日： 2012-09-04
- 发明人: Byeong-Hoon Lee , Ki-Hong Kim , Seung-Won Lee , Sun-Kwon Kim
- 申请人： Byeong-Hoon Lee , Ki-Hong Kim , Seung-Won Lee , Sun-Kwon Kim
- 申请人地址： KR Suwon-Si, Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-Si, Gyeonggi-Do
- 代理机构： F. Chau & Associates, LLC
- 优先权： KR10-2007-0014966 20070213
- 主分类号： G11C16/04
- IPC分类号： G11C16/04
摘要：
A memory system includes a memory and a memory controller operating to control the memory. The memory includes a random accessible memory including a memory cell array operable in a random access mode, a NAND flash memory, and a selection circuit making the memory controller operate either one of the random accessible memory or the NAND flash memory.
公开/授权文献
- US20110101114A1 Memory System and Data Reading Method Thereof 公开/授权日：2011-05-05
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